| No. |
Part Name |
Description |
Manufacturer |
| 1 |
B625D |
Operational amplifier with TTL output, extended temperature area, possibly equivalent TCA325A |
RFT |
| 2 |
BSM150GB120DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 3 |
BSM150GB170DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 4 |
BSM300GA120DN2E3166 |
IGBT Power Module (Single switch Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 5 |
BSM300GA170DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 6 |
BSM35GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area) |
Siemens |
| 7 |
C4258-01 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
| 8 |
C4258-02 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
| 9 |
C4258-03 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
| 10 |
C67070-A2007-A70 |
IGBT Power Module (Single switch Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 11 |
C67070-A2111-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area) |
Siemens |
| 12 |
C67070-A2709-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 13 |
C67070-A2710-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 14 |
C67076-A2112-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 15 |
COMPARISON TABLE |
The transistors listed in this comparison table are not identical, however, their data is so similar that they can be interchanged in almost all circuits |
TUNGSRAM |
| 16 |
G7150-16 |
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer |
Hamamatsu Corporation |
| 17 |
G7751-01 |
Active area: 0.6mm; external input voltage:+-18V; infrared detector module with preamplifier: high sensitivity module of easy-to-use. For infrared detection |
Hamamatsu Corporation |
| 18 |
ICL8069DC_D |
Low-voltage reference, Dice are specified at TA= +25C. |
MAXIM - Dallas Semiconductor |
| 19 |
OPR5913 |
Large area SMD silicon photodiode |
Optek Technology |
| 20 |
P7152-10 |
Active area: 1x1mm; external input voltage:+-18V; infrared detector module with preamplifier: high sensitivity module of easy-to-use. For infrared detection |
Hamamatsu Corporation |
| 21 |
P7752-10 |
Active area: 1x1mm; external input voltage:+-18V; infrared detector module with preamplifier: high sensitivity module of easy-to-use. For infrared detection |
Hamamatsu Corporation |
| 22 |
TC7652 |
The TC7652 is a lower noise version of the TC7650, sacrificing some input specifications (bias current and bandwidth)to achieve a 10x reduction in noise.All the other benefits of the chopper technique are present,i.e.freedom from offset ad |
Microchip |
| 23 |
VITRAMON - CASSETTE PACKAGED CAPS |
Monolithic Ceramic Chip Capacitors, Increased Pick and Place Productivity, Reduced Storage Area Required, Reduced Packaging Waste, Anti-Static and Reusable Cassette Cases |
Vishay |
| 24 |
VTH2090 |
LARGE AREA PIN PHOTODIODE |
PerkinElmer Optoelectronics |
| 25 |
VTH2091 |
LARGE AREA PIN PHOTODIODE |
PerkinElmer Optoelectronics |
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