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Datasheets for E AS A

Datasheets found :: 46
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No. Part Name Description Manufacturer
1 12BH7-A The 12BH7-A is a miniature medium-mu twin troide designed primarily for use as a vertical-deflection amplifier in television receivers General Semiconductor
2 1S310 Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
3 1S310H Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
4 1S311 Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
5 1S311H Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
6 1S312 Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
7 1S312H Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
8 1S313 Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
9 1S313H Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
10 1S314 Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
11 1S314H Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
12 1S315 Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
13 1S315H Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
14 1S80 Germanium Point Contact Diode, intended for use as a General Detector Hitachi Semiconductor
15 2N2652 Dual NPN silicon transistors for use as a differential amplifier Motorola
16 2N2652A Dual NPN silicon transistors for use as a differential amplifier Motorola
17 2N3425 Dual NPN silicon transistor designed for use as a high-frequency sense amplifier Motorola
18 2N3515 Dual NPN silicon transistor for use as a differential amplifier Motorola
19 2N3518 Dual NPN silicon transistor for use as a differential amplifier Motorola
20 5Z27 ZENER DIODE SILICON DIFFUSED JUNCTION POWER SURGE SUPPRESSOR designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over .voltage conditions. TOSHIBA
21 5Z30 ZENER DIODE SILICON DIFFUSED JUNCTION POWER SURGE SUPPRESSOR designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over .voltage conditions. TOSHIBA
22 BLW95 HF Power NPN Transistor, presents excellent performance as a linear amplifier in SSB applications Philips
23 BSY79 NPN silicon epitaxy planar transistor with high collector-emitter voltage, suitable as a driver transistor for number display glow tubes ITT Semiconductors
24 HLMA-QF00-S0000 HLMA-QF00-S0000 · Subminiature High Performance AS AlInGaP Red LED Lamps Agilent (Hewlett-Packard)
25 HLMA-QG00-S0011 HLMA-QG00-S0011 · Subminiature High Performance AS AlInGaP Red LED Lamps, Gull Wing, 7 inch reel Agilent (Hewlett-Packard)
26 HLMA-QG00-S0021 HLMA-QG00-S0021 · Subminiature High Performance AS AlInGaP Red LED Lamps Agilent (Hewlett-Packard)
27 HLMA-QG00-TV000 HLMA-QG00-TV000 · Subminiature High Performance AS AlInGaP Red LED Lamps Agilent (Hewlett-Packard)
28 HLMA-QH00-S0011 HLMA-QH00-S0011 · Subminiature High Performance AS AlInGaP Red Orange LED Lamps, Gull Wing, 7 inch Reel Agilent (Hewlett-Packard)
29 HLMA-QH00-S0012 HLMA-QH00-S0012 · Subminiature High Performance AS AlInGaP Red Orange LED Lamps, Gull Wing, Bulk Agilent (Hewlett-Packard)
30 HLMA-QJ00-S0000 HLMA-QJ00-S0000 · Subminiature High Performance AS AlInGaP Orange LED Lamps Agilent (Hewlett-Packard)


Datasheets found :: 46
Page: | 1 | 2 |



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