| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1417G5 |
NetLight 1417G5 and 1417H5-Type ATM/SONET/SDH Transceivers with Clock Recovery |
Agere Systems |
| 2 |
1417G5A |
NetLight 1417G5 and 1417H5-Type ATM/SONET/SDH Transceivers with Clock Recovery |
Agere Systems |
| 3 |
1417H5A |
NetLight 1417G5 and 1417H5-Type ATM/SONET/SDH Transceivers with Clock Recovery |
Agere Systems |
| 4 |
163CNQ060 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
| 5 |
163CNQ080 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
| 6 |
163CNQ090 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
| 7 |
163CNQ100 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
| 8 |
1SV294 |
Variable Resistance Attenuator Use |
SANYO |
| 9 |
1SV298 |
pi Type Attenuator Applications |
SANYO |
| 10 |
1SV315 |
Variabe resistance Attenuator Use |
SANYO |
| 11 |
1SV316 |
Variabe resistance Attenuator Use |
SANYO |
| 12 |
2SB1318 |
Darlington Transistor BUILT-IN DUMPER DIODE AT E-C |
NEC |
| 13 |
2SD1579 |
Darlington transistor including a dumper diode at E-C |
NEC |
| 14 |
335824B00034 |
TAPE Attachment Method |
etc |
| 15 |
AD9631 |
Ultralow Distortion, High Speed Op Amp, Stable at Gain of 1 |
Analog Devices |
| 16 |
AD9631ACHIPS |
Ultralow Distortion, High Speed Op Amp, Stable at Gain of 1 |
Analog Devices |
| 17 |
AD9632 |
Ultralow Distortion, High Speed Op Amp, Stable at Gain of 2 |
Analog Devices |
| 18 |
AEY17 |
Germanium bonded backward diode for use at X band |
Mullard |
| 19 |
AEY29 |
Germanium bonded backward diode for use at J band |
Mullard |
| 20 |
AF002N2-32 |
GaAs IC 15 dB Voltage Variable Attenuator Single Control DC�2 GHz |
Alpha Industries Inc |
| 21 |
AF002N2-32 |
GaAs IC 15 dB Voltage Variable Attenuator Single Control DC-2 GHz |
Skyworks Solutions |
| 22 |
AN1438 |
LOW NOISE AMPLIFIER OPTIMIZED FOR MINIMUM NOISE FIGURE AT 1.9GHZ USING START420 |
SGS Thomson Microelectronics |
| 23 |
AT-108 |
Frequency 0.5-3 GHz, 40dB, voltage variable absorptive attenuator |
MA-Com |
| 24 |
AT-108 |
Voltage Variable Absorptive Attenuator 40 dB, 0.5-3.0 GHz |
Tyco Electronics |
| 25 |
AT-108RTR |
Frequency 0.5-3 GHz, 40dB, voltage variable absorptive attenuator |
MA-Com |
| 26 |
AT-108RTR |
Voltage Variable Absorptive Attenuator 40 dB, 0.5-3.0 GHz |
Tyco Electronics |
| 27 |
AT-108TR |
Frequency 0.5-3 GHz, 40dB, voltage variable absorptive attenuator |
MA-Com |
| 28 |
AT-108TR |
Voltage Variable Absorptive Attenuator 40 dB, 0.5-3.0 GHz |
Tyco Electronics |
| 29 |
AT-109 |
Frequency 0.5-2 GHz, 35dB, voltage variable absorptive attenuator |
MA-Com |
| 30 |
AT-109 |
Voltage Variable Absorptive Attenuator, 35 dB 0.5 - 2 GHz |
Tyco Electronics |
| | | |
