| No. |
Part Name |
Description |
Manufacturer |
| 1 |
68HC705C8 |
PROGRAMMING REFRERENCE GUIDE |
Motorola |
| 2 |
9S12A128DGV1 |
9S12A128 Device Guide |
Motorola |
| 3 |
9S12B128DGV1 |
9S12B128 Device Guide |
Motorola |
| 4 |
9S12DJ64DGV1 |
9S12DJ64DG Device Guide, also covers 9S12D64 and 9S12A64 devices |
Motorola |
| 5 |
9S12DP256BDGV2 |
9S12Dx256B Device Guide, also covers C derivatives and 9S12Ax256 devices |
Motorola |
| 6 |
9S12DP512DGV1 |
9S12Dx512 Device Guide |
Motorola |
| 7 |
9S12DT128BDGV1 |
9S12DT128B Device Guide |
Motorola |
| 8 |
9S12DT128DGV2 |
9S12DT128(E), 9S12DG128(E), 9S12DJ128(E), 9S12DB128 Device Guide |
Motorola |
| 9 |
9S12DT256DGV3 |
9S12Dx256 Device Guide |
Motorola |
| 10 |
9S12H256BDGV1 |
9S12H256B Device Guide |
Motorola |
| 11 |
9S12T64AF16V1 |
9S12T64 Device Guide |
Motorola |
| 12 |
AN912 |
MCUS - A SIMPLE GUIDE TO DEVELOPMENT TOOLS |
SGS Thomson Microelectronics |
| 13 |
CGY11A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 14 |
CGY11B |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 15 |
CGY12A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 16 |
CGY12B |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 17 |
CGY13A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 18 |
CMX868 |
Programmer's Quick Reference Guide to the CMX868 |
CONSUMER MICROCIRCUITS LIMITED |
| 19 |
CROSS-REFERENCE |
Cross Reference Guide IPRS Baneasa |
IPRS Baneasa |
| 20 |
CS3750ENF16 |
100mA dual H-Bridge air-core guade driver |
Cherry Semiconductor |
| 21 |
CXY11A |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 22 |
CXY11B |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 23 |
CXY11C |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 24 |
CXY19 |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 25 |
CXY20 |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 26 |
DS26F32ME/883 |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 27 |
DS26F32MER-QML |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 28 |
DS26F32MJ-QMLV |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 29 |
DS26F32MJR-QML |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 30 |
DS26F32MJRQMLV |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| | | |
