| No. |
Part Name |
Description |
Manufacturer |
| 1 |
187 |
Subminiature krypton lamp with clear-end. 4.2V, 1.05A, 50 lumens. |
Gilway Technical Lamp |
| 2 |
187-1 |
Subminiature Krypton Lamps with Lens-End |
Gilway Technical Lamp |
| 3 |
188 |
Subminiature krypton lamp with clear-end. 5.0V, 1.00A, 42 lumens. |
Gilway Technical Lamp |
| 4 |
188-1 |
Subminiature Krypton Lamps with Lens-End |
Gilway Technical Lamp |
| 5 |
1N446 |
Microwave K-Ka-band Detector |
Motorola |
| 6 |
1N4939 |
Germanium Microwave Ka-band Mixer, NF=10.5dB |
Motorola |
| 7 |
1N4940 |
Germanium Microwave Ka-band Mixer, f=9,375 MHz NF=6.5dB |
Motorola |
| 8 |
1N53 |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
| 9 |
1N53A |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
| 10 |
1N53B |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
| 11 |
1N53C |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
| 12 |
1N53D |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
| 13 |
1N78 |
Silicon Diode - Microwave Ku-band Mixer: f=16,000 MHz; NF=12 to 7.5 dB |
Motorola |
| 14 |
1N78A |
Silicon Diode - Microwave Ku-band Mixer: f=16,000 MHz; NF=12 to 7.5 dB |
Motorola |
| 15 |
1N78B |
Silicon Diode - Microwave Ku-band Mixer: f=16,000 MHz; NF=12 to 7.5 dB |
Motorola |
| 16 |
1N78C |
Silicon Diode - Microwave Ku-band Mixer: f=16,000 MHz; NF=12 to 7.5 dB |
Motorola |
| 17 |
1N78D |
Silicon Diode - Microwave Ku-band Mixer: f=16,000 MHz; NF=12 to 7.5 dB |
Motorola |
| 18 |
1N78E |
Silicon Diode - Microwave Ku-band Mixer: f=16,000 MHz; NF=12 to 7.5 dB |
Motorola |
| 19 |
1N78F |
Silicon Diode - Microwave Ku-band Mixer: f=16,000 MHz; NF=12 to 7.5 dB |
Motorola |
| 20 |
1N918 |
Microwave Ku-band Mixer |
Motorola |
| 21 |
2KBP005M |
Diode Rectifier Bridge Single 50V 2A 4-Pin Case KBP |
New Jersey Semiconductor |
| 22 |
2KBP01M |
Diode Rectifier Bridge Single 100V 2A 4-Pin Case KBP |
New Jersey Semiconductor |
| 23 |
2KBP02M |
Diode Rectifier Bridge Single 200V 2A 4-Pin Case KBP |
New Jersey Semiconductor |
| 24 |
2KBP04M |
Diode Rectifier Bridge Single 400V 2A 4-Pin Case KBP |
New Jersey Semiconductor |
| 25 |
2KBP06M |
Diode Rectifier Bridge Single 600V 2A 4-Pin Case KBP |
New Jersey Semiconductor |
| 26 |
2KBP08-1 |
Diode Rectifier Bridge Single 800V 2A 4-Pin Case KBP |
New Jersey Semiconductor |
| 27 |
2KBP08M |
Diode Rectifier Bridge Single 800V 2A 4-Pin Case KBP |
New Jersey Semiconductor |
| 28 |
2KBP0M |
Diode Rectifier Bridge Single 50V 2A 4-Pin Case KBP |
New Jersey Semiconductor |
| 29 |
2KBP10M |
Diode Rectifier Bridge Single 1KV 2A 4-Pin Case KBP |
New Jersey Semiconductor |
| 30 |
2SK406 |
Low Noise Ku-K BAND GaAs FET (This NE71083 datasheet is also the datasheet of 2SK406, see the Electrical Characteristics table) |
NEC |
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