No. |
Part Name |
Description |
Manufacturer |
1 |
10DZ10 |
Voltage Regulator Diode of 10W 10V |
IPRS Baneasa |
2 |
10DZ100 |
Voltage Regulator Diode of 10W 100V |
IPRS Baneasa |
3 |
10DZ12 |
Voltage Regulator Diode of 10W 12V |
IPRS Baneasa |
4 |
10DZ120 |
Voltage Regulator Diode of 10W 120V |
IPRS Baneasa |
5 |
10DZ15 |
Voltage Regulator Diode of 10W 15V |
IPRS Baneasa |
6 |
10DZ150 |
Voltage Regulator Diode of 10W 150V |
IPRS Baneasa |
7 |
10DZ18 |
Voltage Regulator Diode of 10W 18V |
IPRS Baneasa |
8 |
10DZ180 |
Voltage Regulator Diode of 10W 180V |
IPRS Baneasa |
9 |
10DZ22 |
Voltage Regulator Diode of 10W 22V |
IPRS Baneasa |
10 |
10DZ27 |
Voltage Regulator Diode of 10W 27V |
IPRS Baneasa |
11 |
10DZ33 |
Voltage Regulator Diode of 10W 33V |
IPRS Baneasa |
12 |
10DZ39 |
Voltage Regulator Diode of 10W 39V |
IPRS Baneasa |
13 |
10DZ47 |
Voltage Regulator Diode of 10W 47V |
IPRS Baneasa |
14 |
10DZ56 |
Voltage Regulator Diode of 10W 56V |
IPRS Baneasa |
15 |
10DZ68 |
Voltage Regulator Diode of 10W 68V |
IPRS Baneasa |
16 |
10DZ6V8 |
Voltage Regulator Diode of 10W 6.8V |
IPRS Baneasa |
17 |
10DZ8 |
Voltage Regulator Diode of 10W 8V |
IPRS Baneasa |
18 |
10DZ82 |
Voltage Regulator Diode of 10W 82V |
IPRS Baneasa |
19 |
24AA32A |
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C compatible 2-wire serial interface bus. The 24AA32A features a page-write capability of up to 32 bytes of data and is capable of both r |
Microchip |
20 |
2N2369A |
NPN silicon epitaxial transistor for high-speed range of 10-100 mAdc switching applications |
Motorola |
21 |
2N5441 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
22 |
2N5442 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
23 |
2N5443 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
24 |
2N5444 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
25 |
2N5445 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
26 |
2N5446 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
27 |
2N5470 |
The Use of Coaxial-Package Transistors in Microstripline Circuits - Application Note |
RCA Solid State |
28 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
29 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
30 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
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