| No. |
Part Name |
Description |
Manufacturer |
| 1 |
10DZ10 |
Voltage Regulator Diode of 10W 10V |
IPRS Baneasa |
| 2 |
10DZ100 |
Voltage Regulator Diode of 10W 100V |
IPRS Baneasa |
| 3 |
10DZ12 |
Voltage Regulator Diode of 10W 12V |
IPRS Baneasa |
| 4 |
10DZ120 |
Voltage Regulator Diode of 10W 120V |
IPRS Baneasa |
| 5 |
10DZ15 |
Voltage Regulator Diode of 10W 15V |
IPRS Baneasa |
| 6 |
10DZ150 |
Voltage Regulator Diode of 10W 150V |
IPRS Baneasa |
| 7 |
10DZ18 |
Voltage Regulator Diode of 10W 18V |
IPRS Baneasa |
| 8 |
10DZ180 |
Voltage Regulator Diode of 10W 180V |
IPRS Baneasa |
| 9 |
10DZ22 |
Voltage Regulator Diode of 10W 22V |
IPRS Baneasa |
| 10 |
10DZ27 |
Voltage Regulator Diode of 10W 27V |
IPRS Baneasa |
| 11 |
10DZ33 |
Voltage Regulator Diode of 10W 33V |
IPRS Baneasa |
| 12 |
10DZ39 |
Voltage Regulator Diode of 10W 39V |
IPRS Baneasa |
| 13 |
10DZ47 |
Voltage Regulator Diode of 10W 47V |
IPRS Baneasa |
| 14 |
10DZ56 |
Voltage Regulator Diode of 10W 56V |
IPRS Baneasa |
| 15 |
10DZ68 |
Voltage Regulator Diode of 10W 68V |
IPRS Baneasa |
| 16 |
10DZ6V8 |
Voltage Regulator Diode of 10W 6.8V |
IPRS Baneasa |
| 17 |
10DZ8 |
Voltage Regulator Diode of 10W 8V |
IPRS Baneasa |
| 18 |
10DZ82 |
Voltage Regulator Diode of 10W 82V |
IPRS Baneasa |
| 19 |
24AA32A |
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C™ compatible 2-wire serial interface bus. The 24AA32A features a page-write capability of up to 32 bytes of data and is capable of both r |
Microchip |
| 20 |
2N2369A |
NPN silicon epitaxial transistor for high-speed range of 10-100 mAdc switching applications |
Motorola |
| 21 |
2N5470 |
The Use of Coaxial-Package Transistors in Microstripline Circuits - Application Note |
RCA Solid State |
| 22 |
2N6618 |
NPN Silicon High Frequency Transistor, capable of MIL-S-19500 and MIL-STD-750/883 |
Motorola |
| 23 |
2N6679 |
NPN Silicon High Frequency Transistor, capable of MIL-S-19500 and MIL-STD-750/883 |
Motorola |
| 24 |
2N6718L |
Mini size of Discrete semiconductor elements |
SINYORK |
| 25 |
2SC1399 |
NPN silicon transistor, designed for use in driver stage of AF amplifier and low speed switching |
NEC |
| 26 |
2SC3381 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) |
TOSHIBA |
| 27 |
2SD575 |
For Horizontal Deflection Output Use of Color TV |
Unknow |
| 28 |
2SD882 |
NPN(for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver) |
NEC |
| 29 |
56-245 |
Spacer disc made of insulating material, for transistors with housing TO-5, TO-12, TO-33, TO-39 |
VALVO |
| 30 |
56-246 |
Spacer disc made of insulating material, for transistors with housing TO-18, TO-72 |
VALVO |
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