No. |
Part Name |
Description |
Manufacturer |
1 |
2N5322 |
General purpose P-N-P silicon power transistor. |
General Electric Solid State |
2 |
2N5323 |
General purpose P-N-P silicon power transistor. |
General Electric Solid State |
3 |
2N6804 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
4 |
2N6806 |
-200V Single P-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
5 |
2N6845 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package |
International Rectifier |
6 |
2N6847 |
-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package |
International Rectifier |
7 |
2N6849 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package |
International Rectifier |
8 |
2N6851 |
-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package |
International Rectifier |
9 |
30KPA350 |
Diode TVS Single Uni-Dir 350V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
10 |
30KPA350A |
Diode TVS Single Uni-Dir 350V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
11 |
30KPA350C |
Diode TVS Single Uni-Dir 350V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
12 |
30KPA350CA |
Diode TVS Single Bi-Dir 350V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
13 |
30KPA400 |
Diode TVS Single Uni-Dir 400V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
14 |
30KPA400A |
Diode TVS Single Uni-Dir 400V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
15 |
30KPA400C |
Diode TVS Single Uni-Dir 400V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
16 |
30KPA400CA |
Diode TVS Single Bi-Dir 400V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
17 |
30KPA40A |
Diode TVS Single Uni-Dir 400V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
18 |
30KPA40C |
Diode TVS Single Uni-Dir 400V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
19 |
30KPA40CA |
Diode TVS Single Uni-Dir 400V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
20 |
5KP |
Diode TVS Single Uni-Dir 7.5V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
21 |
5KP10 |
Diode TVS Single Uni-Dir 10V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
22 |
5KP100 |
Diode TVS Single Uni-Dir 100V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
23 |
5KP100A |
Diode TVS Single Uni-Dir 100V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
24 |
5KP100C |
Diode TVS Single Bi-Dir 100V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
25 |
5KP10A |
Diode TVS Single Uni-Dir 10V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
26 |
5KP10C |
Diode TVS Single Bi-Dir 10V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
27 |
5KP11 |
Diode TVS Single Uni-Dir 11V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
28 |
5KP110 |
Diode TVS Single Uni-Dir 110V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
29 |
5KP110A |
Diode TVS Single Uni-Dir 110V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
30 |
5KP110C |
Diode TVS Single Bi-Dir 110V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
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