| No. |
Part Name |
Description |
Manufacturer |
| 1 |
150PFT200 |
V(rrm/drm): 2000V; 800A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 2 |
150PFT250 |
V(rrm/drm): 2500V; 800A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 3 |
160PFT100 |
V(rrm/drm): 1000V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 4 |
160PFT100A |
V(rrm/drm): 1000V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 5 |
160PFT120 |
V(rrm/drm): 1200V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 6 |
160PFT120A |
V(rrm/drm): 1200V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 7 |
160PFT140 |
V(rrm/drm): 1400V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 8 |
160PFT160 |
V(rrm/drm): 1600V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 9 |
1N3113 |
Gallium Arsenide Tunnel Diode |
Motorola |
| 10 |
1N3114 |
Gallium Arsenide Tunnel Diode |
Motorola |
| 11 |
1N3115 |
Gallium Arsenide Tunnel Diode |
Motorola |
| 12 |
1N3116 |
Gallium Arsenide Tunnel Diode |
Motorola |
| 13 |
1N3117 |
Gallium Arsenide Tunnel Diode |
Motorola |
| 14 |
1N3118 |
Gallium Arsenide Tunnel Diode |
Motorola |
| 15 |
1N3119 |
Gallium Arsenide Tunnel Diode |
Motorola |
| 16 |
1N3120 |
Gallium Arsenide Tunnel Diode |
Motorola |
| 17 |
1N3138 |
Gallium Arsenide Tunnel Diode |
Motorola |
| 18 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
| 19 |
2SA1091 |
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 20 |
2SA1384 |
Transistor Silicon PNP Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 21 |
2SA1432 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. |
TOSHIBA |
| 22 |
2SA1721 |
Transistor Silicon PNP Epitaxial Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 23 |
2SA429G |
Silicon NPN triple diffused planar transistor, Nixie Tube Driver applications, high voltage Switching applications |
TOSHIBA |
| 24 |
2SC2551 |
Transistor Silicon NPN Epitaxial Type (PCT process) Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 25 |
2SC3515 |
Transistor Silicon NPN Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 26 |
2SC3672 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE CONTROL APPLICATIONS, PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS |
TOSHIBA |
| 27 |
2SC780AG |
Silicon NPN triple diffused planar transistor, Nixie tube driver, high voltage switching applications |
TOSHIBA |
| 28 |
320PJT200 |
V(rrm/drm): 2000V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 29 |
320PJT200A |
V(rrm/drm): 2000V; 1400A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 30 |
320PJT250 |
V(rrm/drm): 2000V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| | | |
