| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N3154 |
Silicon Voltage Reference Diode 8.4V, Mil Type USN/JAN |
Transitron Electronic |
| 2 |
1N3155 |
Silicon Voltage Reference Diode 8.4V, Mil Type USN/JAN |
Transitron Electronic |
| 3 |
1N3156 |
Silicon Voltage Reference Diode 8.4V, Mil Type USN/JAN |
Transitron Electronic |
| 4 |
1N3157 |
Silicon Voltage Reference Diode 8.4V, Mil Type USN/JAN |
Transitron Electronic |
| 5 |
1N937B |
Silicon Voltage Reference Diode 9.0V, Mil Type USN/JAN |
Transitron Electronic |
| 6 |
1N938B |
Silicon Voltage Reference Diode 9.0V, Mil Type USN/JAN |
Transitron Electronic |
| 7 |
1S1920 |
Silicon Diffused Junction Diode used for TV Horizontal Deflection Damper |
Hitachi Semiconductor |
| 8 |
1S1921A |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -200V |
Hitachi Semiconductor |
| 9 |
1S1921B |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -400V |
Hitachi Semiconductor |
| 10 |
1S1921C |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -600V |
Hitachi Semiconductor |
| 11 |
1S1921D |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -800V |
Hitachi Semiconductor |
| 12 |
1S1921E |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1000V |
Hitachi Semiconductor |
| 13 |
1S1921F |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1200V |
Hitachi Semiconductor |
| 14 |
1SV331 |
Variable Capacitance Diode Useful for VCO/TCXO |
TOSHIBA |
| 15 |
2N524 |
PNP germanium transistor to be used in the audio-frequency range |
Motorola |
| 16 |
2N525 |
PNP germanium transistor to be used in the audio-frequency range |
Motorola |
| 17 |
2N526 |
PNP germanium transistor to be used in the audio-frequency range |
Motorola |
| 18 |
2N527 |
PNP germanium transistor to be used in the audio-frequency range |
Motorola |
| 19 |
2N5470 |
The Use of Coaxial-Package Transistors in Microstripline Circuits - Application Note |
RCA Solid State |
| 20 |
2SC1120 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
| 21 |
2SC1121 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
| 22 |
2SC1122A |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio Output Stage applications (low supply voltage use) |
TOSHIBA |
| 23 |
2SC2099 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS) (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
| 24 |
2SC2290 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
| 25 |
2SC2395 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
| 26 |
2SC2510 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) |
TOSHIBA |
| 27 |
2SC2531 |
Silicon NPN epitaxial planar transistor, 2-30MH SSB linear power amplifier applications 28V supply voltage use |
TOSHIBA |
| 28 |
2SC2879 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
| 29 |
9S12CFAMDGV1 |
9S12 C-Family Device User Guide |
Motorola |
| 30 |
9S12DT128DGV2D |
MC9S12DT128 Device User Guide V02.09 |
Motorola |
| | | |
