| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AD783AQ |
Complete Very High Speed Sample-and-Hold Amplifier |
Analog Devices |
| 2 |
AD783AR |
Complete Very High Speed Sample-and-Hold Amplifier |
Analog Devices |
| 3 |
AD783JQ |
Complete Very High Speed Sample-and-Hold Amplifier |
Analog Devices |
| 4 |
AD783JR |
Complete Very High Speed Sample-and-Hold Amplifier |
Analog Devices |
| 5 |
BAR63 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 6 |
BAR63-03 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 7 |
BAR63-03W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 8 |
BAR63-04 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 9 |
BAR63-04W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 10 |
BAR63-05 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 11 |
BAR63-05W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 12 |
BAR63-06 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 13 |
BAR63-06W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 14 |
BAR63-W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 15 |
CFY77 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 16 |
CFY77-08 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 17 |
CFY77-10 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 18 |
CHA2095A |
36-40GHz Low Noise Very High Gain Amplifier |
United Monolithic Semiconductors |
| 19 |
CHA2095A99F/00 |
36-40GHz Low Noise Very High Gain Amplifier |
United Monolithic Semiconductors |
| 20 |
CHA2395 |
36-40GHz Low Noise Very High Gain Amplifier |
United Monolithic Semiconductors |
| 21 |
CHA2395-99F/00 |
36-40GHz Low Noise Very High Gain Amplifier |
United Monolithic Semiconductors |
| 22 |
DS446 |
Silicon Epitaxial Planar Type Temperature Compensation Use Very High-Speed Switching Diode |
SANYO |
| 23 |
DSE010 |
Silicon Epitaxial Planar Type Very High-Speed Switching Diode |
SANYO |
| 24 |
ESDAVLC8-4BN4 |
4-line very low capacitance Transil™ array for ESD protection |
ST Microelectronics |
| 25 |
GMA01U |
Epitaxial Planar Silicon Diode Very High-Speed Switching, Bias Stabilizing Applications |
SANYO |
| 26 |
GMA02 |
Silicon Epitaxial Planar Type Very High-Speed Switching Diode |
SANYO |
| 27 |
LT1226 |
Low Noise Very High Speed Operational Amplifier |
Linear Technology |
| 28 |
LT1226C |
Low Noise Very High Speed Operational Amplifier |
Linear Technology |
| 29 |
LT1226CN8 |
Low Noise Very High Speed Operational Amplifier |
Linear Technology |
| 30 |
LT1226CN8#PBF |
Low Noise Very High Speed Operational Amplifier |
Linear Technology |
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