No. |
Part Name |
Description |
Manufacturer |
1 |
3970-TYPE |
1550 nm transmitter. Connector options: FC/APC bulkhead, tight key;SC/APC bulkhead; E-2000/APC bulkhead. |
Agere Systems |
2 |
AN1384 |
HANDLING TRAPS WITH THE ST120 CORE-2001-11-30 |
SGS Thomson Microelectronics |
3 |
BYQ28E-200 |
Dual ultrafast power diode |
NXP Semiconductors |
4 |
BYQ28E-200 |
Rectifier diodes ultrafast, rugged |
Philips |
5 |
BYQ28E-200 |
Diodes |
Vishay |
6 |
BYQ28E-200E |
Dual ultrafast power diodes |
NXP Semiconductors |
7 |
BYQ30E-200 |
Dual ultrafast power diode |
NXP Semiconductors |
8 |
BYQ30E-200 |
Rectifier diodes ultrafast, rugged |
Philips |
9 |
BYV32E-200 |
Dual ultrafast power diode |
NXP Semiconductors |
10 |
BYV32E-200 |
Rectifier diodes ultrafast, rugged |
Philips |
11 |
BYV40E-200 |
Rectifier diodes ultrafast, rugged |
Philips |
12 |
BYV42E-200 |
Dual ultrafast power diode |
NXP Semiconductors |
13 |
BYV42E-200 |
Rectifier diodes ultrafast, rugged |
Philips |
14 |
BYV79E-200 |
Ultrafast power diode |
NXP Semiconductors |
15 |
BYV79E-200 |
Rectifier diodes ultrafast, rugged |
Philips |
16 |
BYW29E-200 |
Ultrafast power diode |
NXP Semiconductors |
17 |
BYW29E-200 |
Rectifier diodes ultrafast, rugged |
Philips |
18 |
DS1110E-200 |
10-Tap Silicon Delay Line |
MAXIM - Dallas Semiconductor |
19 |
DS1110E-200+ |
10-Tap Silicon Delay Line |
MAXIM - Dallas Semiconductor |
20 |
DS1110LE-200 |
3V 10-Tap Silicon Delay Line |
MAXIM - Dallas Semiconductor |
21 |
DS1110LE-200+ |
3V 10-Tap Silicon Delay Line |
MAXIM - Dallas Semiconductor |
22 |
DS1123LE-200 |
3.3V, 8-Bit, Programmable Timing Element |
MAXIM - Dallas Semiconductor |
23 |
DS1123LE-200+ |
3.3V, 8-Bit, Programmable Timing Element |
MAXIM - Dallas Semiconductor |
24 |
GS832218E-200 |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
GSI Technology |
25 |
GS832218E-200I |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
GSI Technology |
26 |
GS832236E-200 |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
GSI Technology |
27 |
GS832236E-200I |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
GSI Technology |
28 |
GS8644Z18E-200 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM |
GSI Technology |
29 |
GS8644Z18E-200I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM |
GSI Technology |
30 |
GS8644Z36E-200 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM |
GSI Technology |
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