No. |
Part Name |
Description |
Manufacturer |
1 |
DS1110E-250 |
10-Tap Silicon Delay Line |
MAXIM - Dallas Semiconductor |
2 |
DS1110E-250+ |
10-Tap Silicon Delay Line |
MAXIM - Dallas Semiconductor |
3 |
DS1110LE-250 |
3V 10-Tap Silicon Delay Line |
MAXIM - Dallas Semiconductor |
4 |
DS1110LE-250+ |
3V 10-Tap Silicon Delay Line |
MAXIM - Dallas Semiconductor |
5 |
GS832218E-250 |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
GSI Technology |
6 |
GS832218E-250I |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
GSI Technology |
7 |
GS832236E-250 |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
GSI Technology |
8 |
GS832236E-250I |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
GSI Technology |
9 |
GS8644Z18E-250 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM |
GSI Technology |
10 |
GS8644Z18E-250I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM |
GSI Technology |
11 |
GS8644Z36E-250 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM |
GSI Technology |
12 |
GS8644Z36E-250I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM |
GSI Technology |
13 |
ISPLSI2096VE-250LT128 |
3.3V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
14 |
ISPLSI2128VE-250LB208 |
3.3V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
15 |
ISPLSI2128VE-250LQ160 |
3.3V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
16 |
ISPLSI2128VE-250LT176 |
3.3V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
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