| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1032E-80LJ |
High-Density Programmable Logic |
Lattice Semiconductor |
| 2 |
1032E-80LT |
High-Density Programmable Logic |
Lattice Semiconductor |
| 3 |
AM7996 |
Am7996 IEEE-802.3 (Ethernet/Cheapernet) Transceiver Application Note |
Advanced Micro Devices |
| 4 |
CR7E-80DB-3.96DS |
3.96mm and 4mm Pitch Card Edge Connector |
Hirose Electric |
| 5 |
CR7E-80DB-3.96E |
3.96mm and 4mm Pitch Card Edge Connector |
Hirose Electric |
| 6 |
DF18E-80DP-0.4V |
0.4mm Contact Pitch, 1.5mm above the board, Board-to-Board / Board-to-FPC Connectors |
Hirose Electric |
| 7 |
DF18E-80DS-0.4V |
0.4mm Contact Pitch, 1.5mm above the board, Board-to-Board / Board-to-FPC Connectors |
Hirose Electric |
| 8 |
DS1110E-80 |
10-Tap Silicon Delay Line |
MAXIM - Dallas Semiconductor |
| 9 |
DS1110E-80+ |
10-Tap Silicon Delay Line |
MAXIM - Dallas Semiconductor |
| 10 |
ISPLSI1016E-80LJ |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 11 |
ISPLSI1016E-80LJI |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 12 |
ISPLSI1016E-80LT44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 13 |
ISPLSI1016E-80LT44I |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 14 |
ISPLSI1032E-80LJ |
High-Density Programmable Logic |
Lattice Semiconductor |
| 15 |
ISPLSI1032E-80LT |
High-Density Programmable Logic |
Lattice Semiconductor |
| 16 |
ISPLSI5128VE-80LT128 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
| 17 |
ISPLSI5128VE-80LT128I |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
| 18 |
ISPLSI5256VE-80LT100I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
| 19 |
ISPLSI5256VE-80LT128I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
| 20 |
ISPLSI5256VE-80LT256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
| 21 |
ISPLSI5256VE-80LT272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
| 22 |
ISPLSI5512VE-80LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
| 23 |
ISPLSI5512VE-80LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
| 24 |
ISPLSI5512VE-80LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
| 25 |
ISPLSI5512VE-80LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
| 26 |
MBM29DL321BE-80PBT |
32M (4M x 8/2M x 16) BIT Dual Operation |
Fujitsu Microelectronics |
| 27 |
MBM29DL321BE-80TN |
32M (4M x 8/2M x 16) BIT Dual Operation |
Fujitsu Microelectronics |
| 28 |
MBM29DL321BE-80TR |
32M (4M x 8/2M x 16) BIT Dual Operation |
Fujitsu Microelectronics |
| 29 |
MBM29DL321TE-80PBT |
32M (4M x 8/2M x 16) BIT Dual Operation |
Fujitsu Microelectronics |
| 30 |
MBM29DL321TE-80TN |
32M (4M x 8/2M x 16) BIT Dual Operation |
Fujitsu Microelectronics |
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