No. |
Part Name |
Description |
Manufacturer |
1 |
K3N6C1000E-GC,TC,YC |
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
2 |
K3N6V(U)1000E-GC/TC/YC |
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
3 |
K3N6V(U)1000E-GC/TC/YC |
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
4 |
K3N6V(U)1000E-GC/TC/YC |
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
5 |
K4D263238E-GC25 |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
6 |
K4D263238E-GC2A |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
7 |
K4D263238E-GC33 |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
8 |
K4D263238E-GC36 |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
9 |
K4D263238E-GC40 |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
10 |
K4D263238E-GC45 |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
11 |
K4N26323AE-GC20 |
128Mbit GDDR2 SDRAM |
Samsung Electronic |
12 |
K4N26323AE-GC22 |
128Mbit GDDR2 SDRAM |
Samsung Electronic |
13 |
K4N26323AE-GC25 |
128Mbit GDDR2 SDRAM |
Samsung Electronic |
14 |
UT69151RTE-GCA |
SuMMIT RTE MIL-STD-1553 dual redundant remote terminal w/integrated bus transceiver & memory. Lead finish solder. |
Aeroflex Circuit Technology |
15 |
UT69151RTE-GCC |
SuMMIT RTE MIL-STD-1553 dual redundant remote terminal w/integrated bus transceiver & memory. Lead finish gold. |
Aeroflex Circuit Technology |
16 |
UT69151RTE-GCX |
SuMMIT RTE MIL-STD-1553 dual redundant remote terminal w/integrated bus transceiver & memory. Lead finish optional. |
Aeroflex Circuit Technology |
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