| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1S138 |
Diffused silicon diode 800V, color code brown-orange-gray |
Texas Instruments |
| 2 |
BAV13 |
Glass passivated silicon switching diode using the latest technology for high currents, rings color code orange-orange-green |
Texas Instruments |
| 3 |
LC503MBG1-15Q |
Blue-Green 15 5mm LED lamp with water transparent lens |
Marktech Optoelectronics |
| 4 |
LC512MBG1-25Q |
Blue-Green 25 5mm LED lamp with water transparent lens. |
Marktech Optoelectronics |
| 5 |
LM49100 |
Mono Class AB Audio Sub-System with a True-Ground Headphone Amplifier |
Texas Instruments |
| 6 |
LM49100GR/NOPB |
Mono Class AB Audio Sub-System with a True-Ground Headphone Amplifier 25-csBGA -40 to 85 |
Texas Instruments |
| 7 |
MJB44H11T4-A |
Automotive-grade low voltage NPN power transistor |
ST Microelectronics |
| 8 |
QTLP601CIGTR |
InGaN True-Green Surface Mount LED Lamp - Super Bright 0603 (0.6 mm Height) |
Fairchild Semiconductor |
| 9 |
QTLP610CIGTR |
InGaN True-Green Surface Mount LED Lamp - Super Bright Right Angle |
Fairchild Semiconductor |
| 10 |
QTLP630CIGTR |
InGaN True-Green Surface Mount LED Lamp (0805) Chip Type - Water Clear |
Fairchild Semiconductor |
| 11 |
QTLP650CIGTR |
InGaN Ture-Green Surface Mount LED Lamp - Super Bright 1206 |
Fairchild Semiconductor |
| 12 |
QTLP651CIGTR |
InGaN True-Green Surface Mount LED Lamp - Super Bright 1206 (Inner Lens) |
Fairchild Semiconductor |
| 13 |
QTLP652CIGTR |
InGaN True-Green Surface Mount LED Lamp - Super Bright 1206 (Reverse Mount) |
Fairchild Semiconductor |
| 14 |
QTLP660CIGTR |
InGaN True-Green Surface Mount LED Lamp - Super Bright 1.8mm (Dome Lens) |
Fairchild Semiconductor |
| 15 |
QTLP670CIGTR |
InGaN True-Green Surface Mount LED Lamp - Super Bright PLCC-2 |
Fairchild Semiconductor |
| 16 |
SLP-3130C-81 |
Infrared LED �5mm yelloe-green contact type LED lamp |
SANYO |
| 17 |
STB18NF30 |
Automotive-grade N-channel 330 V, 160 mOhm typ., 18 A STripFET(TM) II Power MOSFET in a D2PAK package |
ST Microelectronics |
| 18 |
STB36NM60N |
Automotive-grade N-channel 600 V, 0.092 Ohm typ., 29 A MDmesh(TM) II Power MOSFET in D2PAK package |
ST Microelectronics |
| 19 |
STB36NM60ND |
Automotive-grade N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package |
ST Microelectronics |
| 20 |
STB46N30M5 |
Automotive-grade N-channel 300 V, 0.037 Ohm typ., 53 A MDmesh(TM) V Power MOSFET in a D2PAK Package |
ST Microelectronics |
| 21 |
STB9NK80Z |
Automotive-grade N-channel 800 V, 1.5 Ohm typ., 5.2 A Zener-protected SuperMESH(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
| 22 |
STD10NF30 |
Automotive-grade N-channel 300 V, 0.28 Ohm typ., 10 A MESH OVERLAY(TM) Power MOSFET in a DPAK package |
ST Microelectronics |
| 23 |
STD80N4F6 |
Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 24 |
STD80N6F6 |
Automotive-grade N-channel 60 V, 4.4 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a DPAK package |
ST Microelectronics |
| 25 |
STGB20N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ |
ST Microelectronics |
| 26 |
STGB35N35LZ |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 27 |
STGB35N35LZ-1 |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 28 |
STGB35N35LZT4 |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 29 |
STGD10HF60KD |
Automotive-grade 10 A, 600 V short-circuit rugged IGBT with Ultrafast diode |
ST Microelectronics |
| 30 |
STGD19N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ |
ST Microelectronics |
| | | |
