| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1011-350 |
High power Class C transistor designed for L-Band Avionics Mode-S transponder/interrogator applications |
SGS Thomson Microelectronics |
| 2 |
1N4148W-G |
Discrete Devices-Diode-Switching Diode & Array |
Taiwan Semiconductor |
| 3 |
1N4148WS |
Discrete Devices-Diode-Switching Diode & Array |
Taiwan Semiconductor |
| 4 |
1N4448 |
Discrete Devices-Diode-Switching Diode & Array |
Taiwan Semiconductor |
| 5 |
1N4448WS |
Discrete Devices-Diode-Switching Diode & Array |
Taiwan Semiconductor |
| 6 |
1N5391S |
Discrete Devices -Diode-Standard Rectifier |
Taiwan Semiconductor |
| 7 |
1N5392S |
Discrete Devices -Diode-Standard Rectifier |
Taiwan Semiconductor |
| 8 |
1N5393S |
Discrete Devices -Diode-Standard Rectifier |
Taiwan Semiconductor |
| 9 |
1N5395S |
Discrete Devices -Diode-Standard Rectifier |
Taiwan Semiconductor |
| 10 |
1N5397S |
Discrete Devices -Diode-Standard Rectifier |
Taiwan Semiconductor |
| 11 |
1N5398S |
Discrete Devices -Diode-Standard Rectifier |
Taiwan Semiconductor |
| 12 |
1N5399S |
Discrete Devices -Diode-Standard Rectifier |
Taiwan Semiconductor |
| 13 |
1N914B |
Discrete Devices-Diode-Switching Diode & Array |
Taiwan Semiconductor |
| 14 |
1N914BW |
Discrete Devices-Diode-Switching Diode & Array |
Taiwan Semiconductor |
| 15 |
1N914BWS |
Discrete Devices-Diode-Switching Diode & Array |
Taiwan Semiconductor |
| 16 |
1SS133M |
Discrete Devices-Diode-Switching Diode & Array |
Taiwan Semiconductor |
| 17 |
1SS355 |
Discrete Devices-Diode-Switching Diode & Array |
Taiwan Semiconductor |
| 18 |
1SS400 |
Discrete Devices-Diode-Switching Diode & Array |
Taiwan Semiconductor |
| 19 |
1SS400CS |
Discrete Devices-Diode-Switching Diode & Array |
Taiwan Semiconductor |
| 20 |
280SOE-STUDLESS |
PACKAGE SHAPE AND DIMENSIONS |
TRW |
| 21 |
29LS18 |
Quad D Register With Standard and Three-State Outputs |
Monolithic Memories |
| 22 |
2CZ4004 |
Discrete Devices-Diode-Standard Rectifier |
Taiwan Semiconductor |
| 23 |
2CZ4005 |
Discrete Devices-Diode-Standard Rectifier |
Taiwan Semiconductor |
| 24 |
2CZ4006 |
Discrete Devices-Diode-Standard Rectifier |
Taiwan Semiconductor |
| 25 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 26 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 27 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 28 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 29 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 30 |
2N3926 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| | | |
