| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BD-E303RD |
Yellow , anode, dual digit LED display |
Yellow Stone Corp |
| 2 |
BD-E303RD-A |
Yellow , anode, dual digit LED display |
Yellow Stone Corp |
| 3 |
BD-E303RD-B |
Yellow , anode, dual digit LED display |
Yellow Stone Corp |
| 4 |
BD9E303EFJ-LB(E2) |
7.0V to 36V Input, 3.0A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 5 |
BD9E303EFJ-LB(H2) |
7.0V to 36V Input, 3.0A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 6 |
BD9E303EFJ-LBE2 |
7.0V to 36V Input, 3.0A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 7 |
BD9E303EFJ-LBH2 |
7.0V to 36V Input, 3.0A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 8 |
E303 |
Red GaAlAs, T-1 3/4, ultra bright LED. Lens diffused. Luminous intensity at 20mA: 200mcd(min), 300mcd(max). Forward voltage at 20mA: 1.85V(typ), 2.50V(max). |
Gilway Technical Lamp |
| 9 |
E303 |
Triple 3-input |
SGS-ATES |
| 10 |
E303 |
LPDTL integrated circuit, Triple 3-Input Dual 4-Input with Extender |
SGS-ATES |
| 11 |
LMX2541SQE3030E/NOPB |
Ultra-Low Noise PLLatinum Frequency Synthesizer with Integrated VCO 36-WQFN -40 to 85 |
Texas Instruments |
| 12 |
NTE3031 |
Phototransistor Detector NPN-Si, Visible & IR |
NTE Electronics |
| 13 |
NTE3032 |
Phototransistor Detector NPN-Si, Visible & IR |
NTE Electronics |
| 14 |
NTE3033 |
Infrared Photodiode |
NTE Electronics |
| 15 |
NTE3034A |
Phototransistor Detector |
NTE Electronics |
| 16 |
NTE3035 |
Phototransistor Detector |
NTE Electronics |
| 17 |
NTE3035A |
Phototransistor Detector |
NTE Electronics |
| 18 |
NTE3036 |
Phototransistor Silicon NPN Photo Darlington Light Detector |
NTE Electronics |
| 19 |
NTE3037 |
Silicon NPN Phototransistor Detector |
NTE Electronics |
| 20 |
NX8564LE303-BC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1530.33 nm. Frequency 195.90 THz. FC-UPC connector. |
NEC |
| 21 |
NX8564LE303-CC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1530.33 nm. Frequency 195.90 THz. SC-UPC connector. |
NEC |
| 22 |
NX8565LE303-BC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1530.33 nm. Frequency 195.90 THz. FC-UPC connector. |
NEC |
| 23 |
NX8565LE303-CC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1530.33 nm. Frequency 195.90 THz. SC-UPC connector. |
NEC |
| 24 |
NX8566LE303-BC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1530.33 nm. Frequency 195.90 THz. FC-UPC connector. |
NEC |
| 25 |
NX8566LE303-CC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1530.33 nm. Frequency 195.90 THz. SC-UPC connector. |
NEC |
| 26 |
VRE303AD |
Low cost precision reference |
THALER CORPORATION |
| 27 |
VRE303AS |
Low cost precision reference |
THALER CORPORATION |
| 28 |
VRE303BD |
Low cost precision reference |
THALER CORPORATION |
| 29 |
VRE303BS |
Low cost precision reference |
THALER CORPORATION |
| 30 |
VRE303CD |
Low cost precision reference |
THALER CORPORATION |
| | | |
