| No. |
Part Name |
Description |
Manufacturer |
| 1 |
E511 |
High efficiency red, low profile surface mount LED. Lens translucent red. Luminous intensity at 20mA 5.0mcd (min), 12.0mcd (max). Typ.forward voltage at 20mA 2.00V. |
Gilway Technical Lamp |
| 2 |
EDE5116GBSA |
512M bits DDR-II SDRAM |
Elpida Memory |
| 3 |
EDE5116GBSA-4A-E |
512M bits DDR-II SDRAM |
Elpida Memory |
| 4 |
EDE5116GBSA-5A-E |
512M bits DDR-II SDRAM |
Elpida Memory |
| 5 |
EEUTP1E511 |
Aluminum Electrolytic Capacitors (Radial Lead Type) TP-A |
Panasonic |
| 6 |
EEUTP1E511B |
Aluminum Electrolytic Capacitors (Radial Lead Type) TP-A |
Panasonic |
| 7 |
ERZE07E511 |
Surge Absorbers - Varistor Type D Series E |
Panasonic |
| 8 |
ERZE08E511 |
Surge Absorbers - Varistor Type D Series E |
Panasonic |
| 9 |
ERZE10E511 |
Surge Absorbers - Varistor Type D Series E |
Panasonic |
| 10 |
ERZE11E511 |
Surge Absorbers - Varistor Type D Series E |
Panasonic |
| 11 |
NTE5111A |
Zener Diode, 5 Watt �5% Tolerance |
NTE Electronics |
| 12 |
NTE5112A |
Zener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 3.6V. Test current Izt = 350mA. |
NTE Electronics |
| 13 |
NTE5113A |
Zener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 3.9V. Test current Izt = 320mA. |
NTE Electronics |
| 14 |
NTE5114A |
Zener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 4.3V. Test current Izt = 290mA. |
NTE Electronics |
| 15 |
NTE5115A |
Zener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 4.7V. Test current Izt = 260mA. |
NTE Electronics |
| 16 |
NTE5116A |
Zener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 5.1V. Test current Izt = 240mA. |
NTE Electronics |
| 17 |
NTE5117A |
Zener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 5.6V. Test current Izt = 220mA. |
NTE Electronics |
| 18 |
NTE5118A |
Zener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 6.0V. Test current Izt = 200mA. |
NTE Electronics |
| 19 |
NTE5119A |
Zener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 6.2V. Test current Izt = 200mA. |
NTE Electronics |
| 20 |
R3111E511A-TZ |
Low voltage detector. Detector threshold (-Vdet) 5.1V. Output type: Nch open drain. |
Ricoh |
| 21 |
R3111E511C-TZ |
Low voltage detector. Detector threshold (-Vdet) 5.1V. Output type: CMOS |
Ricoh |
| 22 |
ST72E5111R9G0 |
Bits number of 8 Memory type EPROM Microprocessor/controller features CAN 2.0B Controller/SPI/SCI/CAN Frequency clock 16 MHz Memory size 64 bytes |
SGS Thomson Microelectronics |
| 23 |
ST72E511R9G0 |
ST72311R/ST72511R/ST72532R - 8-BIT MCU WITH NESTED INTERRUPTS, EEPROM, ADC,16-BIT TIMERS, 8-BIT PWM ART, SPI, SCI, CAN INTERFACES |
ST Microelectronics |
| 24 |
ST72E511R9G0S |
Bits number of 8 Memory type EPROM Microprocessor/controller features CAN 2.0B Controller/LVD/SPI/SCI/CAN Frequency clock 16 MHz Memory size 64 K-bit |
SGS Thomson Microelectronics |
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