| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BE5517 |
βE5517 Dual transconductance operational amplifiers |
IPRS Baneasa |
| 2 |
BE5517 |
βE5517 Dual transconductance operational amplifiers |
IPRS Baneasa |
| 3 |
BE5517A |
βE5517A Dual transconductance operational amplifiers |
IPRS Baneasa |
| 4 |
BE5517A |
βE5517A Dual transconductance operational amplifiers |
IPRS Baneasa |
| 5 |
NE5510179A-T1 |
3.5 V operation silicon RF power MOSFET for 1.9 GHz transmission amplifiers. |
NEC |
| 6 |
NE5510279A-T1 |
3.5 V operation silicon RF power MOSFET for GSM1800 transmission amplifiers. |
NEC |
| 7 |
NE5511279A |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
NEC |
| 8 |
NE5511279A-T1 |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
NEC |
| 9 |
NE5511279A-T1A |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
NEC |
| 10 |
NE5512 |
Dual high-performance operational amplifier |
Philips |
| 11 |
NE5512D |
Dual high-performance operational amplifier |
Philips |
| 12 |
NE5512N |
Dual high-performance operational amplifier |
Philips |
| 13 |
NE5514 |
Quad high-performance operational amplifier |
Philips |
| 14 |
NE5514D |
Quad high-performance operational amplifier |
Philips |
| 15 |
NE5514N |
Quad high-performance operational amplifier |
Philips |
| 16 |
NE5514NB |
Quad high-performance operational amplifier |
Philips |
| 17 |
NE5517 |
Dual Operational Transconductance Amplifier |
ON Semiconductor |
| 18 |
NE5517 |
Dual operational transconductance amplifier |
Philips |
| 19 |
NE5517A |
Dual operational transconductance amplifier |
Philips |
| 20 |
NE5517AN |
Dual operational transconductance amplifier |
Philips |
| 21 |
NE5517D |
Dual operational transconductance amplifier |
Philips |
| 22 |
NE5517N |
Dual operational transconductance amplifier |
Philips |
| 23 |
NTE5511 |
Silicon Controlled Rectifier (SCR) 5 Amp |
NTE Electronics |
| 24 |
NTE5512 |
Silicon controlled rectifier (SCR), 5 Amp. Peak reverse voltage (repetitive) Vrm(rep) = 400V. Forward current RMS Ifrms = 5A. |
NTE Electronics |
| 25 |
NTE5513 |
Silicon Controlled Rectifier (SCR) 5 Amp |
NTE Electronics |
| 26 |
NTE5514 |
Silicon Controlled Rectifier (SCR) |
NTE Electronics |
| 27 |
NTE5515 |
Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 400V. RMS on-state current It(rms) = 20A. |
NTE Electronics |
| 28 |
NTE5516 |
Silicon Controlled Rectifier (SCR) |
NTE Electronics |
| 29 |
NTE5517 |
Silicon Controlled Rectifier (SCR) |
NTE Electronics |
| 30 |
NTE5518 |
Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 400V. RMS on-state current It(rms) = 35A. |
NTE Electronics |
| | | |
