| No. |
Part Name |
Description |
Manufacturer |
| 1 |
MJE5730 |
1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTS |
Motorola |
| 2 |
MJE5730 |
Power 1A 300V Discrete PNP |
ON Semiconductor |
| 3 |
MJE5730-D |
High Voltage PNP Silicon Power Transistors |
ON Semiconductor |
| 4 |
MJE5731 |
1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTS |
Motorola |
| 5 |
MJE5731 |
Power 1A 350V Discrete PNP |
ON Semiconductor |
| 6 |
MJE5731 |
Power 1A 350V Discrete PNP |
ON Semiconductor |
| 7 |
MJE5731A |
1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTS |
Motorola |
| 8 |
MJE5731A |
Power 1A 400V Discrete PNP |
ON Semiconductor |
| 9 |
NTE573 |
Schottky Barrier Rectifier |
NTE Electronics |
| 10 |
NX8564LE573-BC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1557.36 nm. Frequency 192.50 THz. FC-UPC connector. |
NEC |
| 11 |
NX8564LE573-CC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1557.36 nm. Frequency 192.50 THz. SC-UPC connector. |
NEC |
| 12 |
NX8565LE573-BC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1557.36 nm. Frequency 192.50 THz. FC-UPC connector. |
NEC |
| 13 |
NX8565LE573-CC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1557.36 nm. Frequency 192.50 THz. SC-UPC connector. |
NEC |
| 14 |
NX8566LE573-BC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1557.36 nm. Frequency 192.50 THz. FC-UPC connector. |
NEC |
| 15 |
NX8566LE573-CC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1557.36 nm. Frequency 192.50 THz. SC-UPC connector. |
NEC |
| | | |
