| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AFE5812 |
8-Channel Ultrasound Analog Front End with Passive CW Mixer and Digital I/Q Demodulator, 0.75nV/rtHz 135-NFBGA -40 to 85 |
Texas Instruments |
| 2 |
AFE5812ZCF |
8-Channel Ultrasound Analog Front End with Passive CW Mixer and Digital I/Q Demodulator, 0.75nV/rtHz 135-NFBGA -40 to 85 |
Texas Instruments |
| 3 |
AFE5816 |
Fully-Integrated, 16-Channel Ultrasound Analog Front-End with Passive CW Mixer, 0.95nV/rtHz 289-NFBGA -40 to 85 |
Texas Instruments |
| 4 |
AFE5816ZAV |
Fully-Integrated, 16-Channel Ultrasound Analog Front-End with Passive CW Mixer, 0.95nV/rtHz 289-NFBGA -40 to 85 |
Texas Instruments |
| 5 |
AFE5818 |
16-Channel Ultrasound Analog Front End with Passive CW Mixer, 0.75 nV/rtHz, 124mW/Channel 289-NFBGA -40 to 85 |
Texas Instruments |
| 6 |
AFE5818ZBV |
16-Channel Ultrasound Analog Front End with Passive CW Mixer, 0.75 nV/rtHz, 124mW/Channel 289-NFBGA -40 to 85 |
Texas Instruments |
| 7 |
NTE581 |
General Purpose Silicon Rectifier Fast Recovery |
NTE Electronics |
| 8 |
NTE5810 |
Silicon Power Rectifier Diode, 12 Amp |
NTE Electronics |
| 9 |
NTE5811 |
Silicon Power Rectifier Diode, 12 Amp |
NTE Electronics |
| 10 |
NTE5812 |
6 Amp Plastic Silicon Rectifier |
NTE Electronics |
| 11 |
NTE5814 |
6 Amp. Plastic silicon rectifier. Max recurrent peak reverse voltage 400V. Max RMS voltage 280V. Max average forward rectified current 6A. |
NTE Electronics |
| 12 |
NTE5815 |
6 Amp. Plastic silicon rectifier. Max recurrent peak reverse voltage 600V. Max RMS voltage 420V. Max average forward rectified current 6A. |
NTE Electronics |
| 13 |
NTE5817 |
6 Amp Plastic Silicon Rectifier |
NTE Electronics |
| 14 |
NTE5818 |
Silicon Power Rectifier Stud Mount, Fast Recovery, 12 Amp |
NTE Electronics |
| 15 |
NTE5819 |
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 200V. Non-repetitive peak reverse voltage 250V. |
NTE Electronics |
| 16 |
NX8564LE581-BC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1558.17 nm. Frequency 192.40 THz. FC-UPC connector. |
NEC |
| 17 |
NX8564LE581-CC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1558.17 nm. Frequency 192.40 THz. SC-UPC connector. |
NEC |
| 18 |
NX8565LE581-BC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1558.17 nm. Frequency 192.40 THz. FC-UPC connector. |
NEC |
| 19 |
NX8565LE581-CC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1558.17 nm. Frequency 192.40 THz. SC-UPC connector. |
NEC |
| 20 |
NX8566LE581-BC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.17 nm. Frequency 192.40 THz. FC-UPC connector. |
NEC |
| 21 |
NX8566LE581-CC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.17 nm. Frequency 192.40 THz. SC-UPC connector. |
NEC |
| 22 |
R3111E581A-TZ |
Low voltage detector. Detector threshold (-Vdet) 5.8V. Output type: Nch open drain. |
Ricoh |
| 23 |
R3111E581C-TZ |
Low voltage detector. Detector threshold (-Vdet) 5.8V. Output type: CMOS |
Ricoh |
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