| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AFE5851 |
16-channel VGA with ADC |
Texas Instruments |
| 2 |
AFE5851IRGCR |
16-channel VGA with ADC 64-VQFN -40 to 85 |
Texas Instruments |
| 3 |
AFE5851IRGCT |
16-channel VGA with ADC 64-VQFN -40 to 85 |
Texas Instruments |
| 4 |
MJE5850 |
8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS |
Motorola |
| 5 |
MJE5850 |
Trans GP BJT PNP 300V 8A 3-Pin(3+Tab) TO-220AB Rail |
New Jersey Semiconductor |
| 6 |
MJE5850 |
Power 8A 300V Discrete PNP |
ON Semiconductor |
| 7 |
MJE5850-D |
SWITCHMODE Series PNP Silicon Power Transistors |
ON Semiconductor |
| 8 |
MJE5851 |
8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS |
Motorola |
| 9 |
MJE5851 |
Trans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Rail |
New Jersey Semiconductor |
| 10 |
MJE5851 |
Power 8A 350V Discrete PNP |
ON Semiconductor |
| 11 |
MJE5852 |
8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS |
Motorola |
| 12 |
MJE5852 |
Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Rail |
New Jersey Semiconductor |
| 13 |
MJE5852 |
Power 8A 400V Discrete PNP |
ON Semiconductor |
| 14 |
MJE5852 |
HIGH VOLTAGE PNP POWER TRANSISTOR |
SGS Thomson Microelectronics |
| 15 |
MJE5852 |
HIGH VOLTAGE PNP POWER TRANSISTOR |
ST Microelectronics |
| 16 |
NTE585 |
Silicon Rectifier Diode Schottky Barrier, Fast Switching |
NTE Electronics |
| 17 |
NTE5850 |
Silicon Power Rectifier Diode, 6 Amp |
NTE Electronics |
| 18 |
NTE5851 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. |
NTE Electronics |
| 19 |
NTE5852 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. |
NTE Electronics |
| 20 |
NTE5853 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. |
NTE Electronics |
| 21 |
NTE5854 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. |
NTE Electronics |
| 22 |
NTE5855 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. |
NTE Electronics |
| 23 |
NTE5856 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. |
NTE Electronics |
| 24 |
NTE5857 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. |
NTE Electronics |
| 25 |
NTE5858 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. |
NTE Electronics |
| 26 |
NTE5859 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. |
NTE Electronics |
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