| No. |
Part Name |
Description |
Manufacturer |
| 1 |
MFE591 |
N-Channel Dual-Gate Silicon-Nitride Passivated DMOS FET |
Motorola |
| 2 |
NE591 |
Addressable peripheral drivers |
Philips |
| 3 |
NE591F |
Addressable peripheral drivers |
Philips |
| 4 |
NE591N |
Addressable peripheral drivers |
Philips |
| 5 |
NTE5910 |
Silicon Power Rectifier Diode, 16 Amp |
NTE Electronics |
| 6 |
NTE5911 |
Silicon Power Rectifier Diode, 16 Amp |
NTE Electronics |
| 7 |
NTE5912 |
Silicon Power Rectifier Diode, 20 Amp |
NTE Electronics |
| 8 |
NTE5913 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 20A. |
NTE Electronics |
| 9 |
NTE5914 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 20A. |
NTE Electronics |
| 10 |
NTE5915 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 20A. |
NTE Electronics |
| 11 |
NTE5916 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 20A. |
NTE Electronics |
| 12 |
NTE5917 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 20A. |
NTE Electronics |
| 13 |
NTE5918 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 20A. |
NTE Electronics |
| 14 |
NTE5919 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 20A. |
NTE Electronics |
| 15 |
R3111E591A-TZ |
Low voltage detector. Detector threshold (-Vdet) 5.9V. Output type: Nch open drain. |
Ricoh |
| 16 |
R3111E591C-TZ |
Low voltage detector. Detector threshold (-Vdet) 5.9V. Output type: CMOS |
Ricoh |
| | | |
