No. |
Part Name |
Description |
Manufacturer |
1 |
DS28E80P+TW |
Gamma Radiation Resistant 1-Wire Memory |
MAXIM - Dallas Semiconductor |
2 |
DS28E80P+W |
Gamma Radiation Resistant 1-Wire Memory |
MAXIM - Dallas Semiconductor |
3 |
MBM29DL321BE80PBT |
Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation |
Fujitsu Microelectronics |
4 |
MBM29DL321TE80PBT |
Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation |
Fujitsu Microelectronics |
5 |
MBM29DL322BE80PBT |
Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation |
Fujitsu Microelectronics |
6 |
MBM29DL322TE80PBT |
Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation |
Fujitsu Microelectronics |
7 |
MBM29DL323BE80PBT |
Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation |
Fujitsu Microelectronics |
8 |
MBM29DL323TE80PBT |
Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation |
Fujitsu Microelectronics |
9 |
MBM29DL324BE80PBT |
Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation |
Fujitsu Microelectronics |
10 |
MBM29DL324TE80PBT |
Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation |
Fujitsu Microelectronics |
11 |
MBM29DL640E80PBT |
64 M (8 M X 8/4 M X 16) BIT Dual Operation |
Fujitsu Microelectronics |
12 |
MBM29LV320BE80PBT |
32 M (4 M X 8/2 M X 16) BIT |
Fujitsu Microelectronics |
13 |
MBM29LV320TE80PBT |
32 M (4 M X 8/2 M X 16) BIT |
Fujitsu Microelectronics |
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