No. |
Part Name |
Description |
Manufacturer |
1 |
HUF75333G3 |
Power dissipation 111 W Transistor polarity N Channel Current Id cont. 56 A Pitch lead 5.45 mm Voltage Vds max 55 V Resistance Rds on 0.016 R Temperature current 25 ?C Temperature power 25 ?C |
Fairchild Semiconductor |
2 |
IRS2334M |
High voltage, high speed power MOSFET and IGBT driver for 3-phase applications in a 28_lead 5x5 MLPQ |
International Rectifier |
3 |
IRS2334MPBF |
High voltage, high speed power MOSFET and IGBT driver for 3-phase applications in a 28_lead 5x5 MLPQ |
International Rectifier |
4 |
IRS2334MTRPBF |
High voltage, high speed power MOSFET and IGBT driver for 3-phase applications in a 28_lead 5x5 MLPQ |
International Rectifier |
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