No. |
Part Name |
Description |
Manufacturer |
1 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
2 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
3 |
2N6553 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
4 |
2N6554 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
5 |
2N6555 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
6 |
2N6556 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
7 |
AD204 |
Low Cost, Miniature Isolation Amplifier powered by external clock |
Analog Devices |
8 |
ADM1021 |
The ADM1021 has been replaced by the ADM1021A |
Analog Devices |
9 |
AK2124 |
Receiver/Demodulator for time code signals transmitted by the transmitters |
etc |
10 |
AK2125 |
Receiver/ Demodulator for time code signals transmitted by the transmitter DCF77( Germany) ,MSF(UK), or WWVB(USA) |
etc |
11 |
AK2127 |
Receiver/ Demodulator for time code signals transmitted by the transmitter |
etc |
12 |
AN1099 |
ST10-DSP MAC 06/07/1997 (OBSOLETE REPLACED BY AN1442) |
SGS Thomson Microelectronics |
13 |
AN1100 |
ST10X167/F168 REDUCING A TO D CONVERSION ERROR - 19/10/1998 (OBSOLETE, REPLACED BY AN1493) |
SGS Thomson Microelectronics |
14 |
APPLICATION-NOTE |
hFE and noise figure deterioration caused by E-B junction breakdown in transistors |
NEC |
15 |
BD9423EFV |
6ch boost LED driver which constant setting can be shared by I<sup>2</sup>C control |
ROHM |
16 |
BD9423EFV-E2 |
6ch boost LED driver which constant setting can be shared by I<sup>2</sup>C control |
ROHM |
17 |
BTX35 |
Controlled Avalanche Thyristor, superseded by the BTW47 series |
Philips |
18 |
BTX36 |
Controlled Avalanche Thyristor, superseded by the BTW47 series |
Philips |
19 |
BTX37 |
Controlled Avalanche Thyristor, superseded by the BTW24 series |
Philips |
20 |
BTX38 |
Controlled Avalanche Thyristor, superseded by the BTW23 series |
Philips |
21 |
BTX47 |
Controlled Avalanche Thyristor, superseded by the BTW47 series |
Philips |
22 |
BTX48 |
Controlled Avalanche Thyristor, superseded by the BTW92 series |
Philips |
23 |
BTX49 |
Controlled Avalanche Thyristor, superseded by the BTW23 series |
Philips |
24 |
BTX50 |
Controlled Avalanche Thyristor, superseded by the BTW23 series |
Philips |
25 |
BTX68 |
Controlled Avalanche Thyristor, superseded by the BTY79 series |
Philips |
26 |
BTX81 |
Silicon Thyristor, superseded by the BTW92 series |
Philips |
27 |
BTX82 |
Silicon Thyristor, superseded by the BTW24 series |
Philips |
28 |
BTX92 |
Controlled Avalanche Thyristor with high dV/dt and dl/dt capabilities, superseded by the BTW92 series |
Philips |
29 |
BTY95 |
P-GATE Silicon Thyristor, superseded by the BTW24 series |
Philips |
30 |
BTY99 |
P-GATE Silicon Thyristor, superseded by the BTW23 series |
Philips |
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