No. |
Part Name |
Description |
Manufacturer |
1 |
1A229 |
High-Performance LED(Battery-Operated Equipment) |
Mitel Semiconductor |
2 |
1N6264 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
3 |
1N6264 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
4 |
1N6265 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
5 |
1N6265 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
6 |
1N6266 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
7 |
1N6266 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
8 |
2N2212 |
10A PNP Alloy-Diffused Epitaxial Germanium Power Transistor |
Motorola |
9 |
2N2857 |
Double-diffused epitaxial planar silicon RF power transistor |
RCA Solid State |
10 |
2N3878 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
11 |
2N441 |
PNP germanium power transistor, Power and temperature exceed EIA registration |
Motorola |
12 |
2N442 |
PNP germanium power transistor, Power and temperature exceed EIA registration |
Motorola |
13 |
2N443 |
PNP germanium power transistor, Power and temperature exceed EIA registration |
Motorola |
14 |
2N5202 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
15 |
2N6500 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
16 |
2N6500 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
17 |
2SB468 |
Germanium Transistor PNP Diffused Base Alloyed Emitter, intended for use in TV Horizontal Deflection Power Output |
Hitachi Semiconductor |
18 |
2SB468 |
GERMANIUM PNP DIFFUSED BASE ALLOYED EMITTER |
Unknow |
19 |
485ELC |
Max voltage:20V; 250mA; high speed ethernet data line protector. For ethernet- 10/100 base T, catagory 5 systems, RS-485 serial communication lines, ISDN equipment/systems, video transmission systems |
Protek Devices |
20 |
4N25 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
21 |
4N26 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
22 |
4N27 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
23 |
4N28 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
24 |
520E940C |
5.0mm INFRARED EMITTING DIODE |
etc |
25 |
5962F9671101VXC |
Radiation Hardened EDAC (Error Detection and Correction Circuit) |
Intersil |
26 |
5962F9671101VYC |
Radiation Hardened EDAC (Error Detection and Correction Circuit) |
Intersil |
27 |
5962F9672101VXC |
Radiation Hardened EDAC (Error Detection and Correction) |
Intersil |
28 |
5962F9672101VYC |
Radiation Hardened EDAC (Error Detection and Correction) |
Intersil |
29 |
7206FRPEB30 |
High-speed epi-CMOS (16K x 9-bit) parallel FIFO |
Maxwell Technologies |
30 |
7206FRPEB40 |
High-speed epi-CMOS (16K x 9-bit) parallel FIFO |
Maxwell Technologies |
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