| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1A229 |
High-Performance LED(Battery-Operated Equipment) |
Mitel Semiconductor |
| 2 |
1N6264 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 3 |
1N6264 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 4 |
1N6265 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 5 |
1N6265 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 6 |
1N6266 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 7 |
1N6266 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 8 |
2N2212 |
10A PNP Alloy-Diffused Epitaxial Germanium Power Transistor |
Motorola |
| 9 |
2N2857 |
Double-diffused epitaxial planar silicon RF power transistor |
RCA Solid State |
| 10 |
2N3878 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
| 11 |
2N441 |
PNP germanium power transistor, Power and temperature exceed EIA registration |
Motorola |
| 12 |
2N442 |
PNP germanium power transistor, Power and temperature exceed EIA registration |
Motorola |
| 13 |
2N443 |
PNP germanium power transistor, Power and temperature exceed EIA registration |
Motorola |
| 14 |
2N5202 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
| 15 |
2N6500 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
| 16 |
2N6500 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
| 17 |
2SB468 |
Germanium Transistor PNP Diffused Base Alloyed Emitter, intended for use in TV Horizontal Deflection Power Output |
Hitachi Semiconductor |
| 18 |
2SB468 |
GERMANIUM PNP DIFFUSED BASE ALLOYED EMITTER |
Unknow |
| 19 |
485ELC |
Max voltage:20V; 250mA; high speed ethernet data line protector. For ethernet- 10/100 base T, catagory 5 systems, RS-485 serial communication lines, ISDN equipment/systems, video transmission systems |
Protek Devices |
| 20 |
4N25 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 21 |
4N26 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 22 |
4N27 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 23 |
4N28 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 24 |
520E940C |
5.0mm INFRARED EMITTING DIODE |
etc |
| 25 |
5962F9671101VXC |
Radiation Hardened EDAC (Error Detection and Correction Circuit) |
Intersil |
| 26 |
5962F9671101VYC |
Radiation Hardened EDAC (Error Detection and Correction Circuit) |
Intersil |
| 27 |
5962F9672101VXC |
Radiation Hardened EDAC (Error Detection and Correction) |
Intersil |
| 28 |
5962F9672101VYC |
Radiation Hardened EDAC (Error Detection and Correction) |
Intersil |
| 29 |
7206FRPEB30 |
High-speed epi-CMOS (16K x 9-bit) parallel FIFO |
Maxwell Technologies |
| 30 |
7206FRPEB40 |
High-speed epi-CMOS (16K x 9-bit) parallel FIFO |
Maxwell Technologies |
| | | |
