No. |
Part Name |
Description |
Manufacturer |
1 |
1011-050 |
High Power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications |
SGS Thomson Microelectronics |
2 |
1011-060 |
High power Class C transistor designed for L-Band Avionics transponder/interrogator pulsed output |
SGS Thomson Microelectronics |
3 |
10133 |
Quad D-Type Latch (with gated outputs) |
Signetics |
4 |
10133F |
Quad D-Type Latch (with gated outputs) |
Signetics |
5 |
10161 |
1 of 8 multiplexer/decoder (selected output is low) |
Signetics |
6 |
10161F |
1 of 8 multiplexer/decoder (selected output is low) |
Signetics |
7 |
10162 |
1 of 8 demultiplexer/decoder (selected output is high) |
Signetics |
8 |
10162F |
1 of 8 demultiplexer/decoder (selected output is high) |
Signetics |
9 |
10171 |
Dual 1 of 4 demultiplexer/decoder (selected output is low) |
Signetics |
10 |
10171F |
Dual 1 of 4 demultiplexer/decoder (selected output is low) |
Signetics |
11 |
10172 |
Dual 1 OF 4 demultiplexer/decoder (selected output is high) |
Signetics |
12 |
10172F |
Dual 1 OF 4 demultiplexer/decoder (selected output is high) |
Signetics |
13 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec |
Samsung Electronic |
14 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
15 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
16 |
13PD100-S |
The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... |
Anadigics Inc |
17 |
13PD150-S |
The 13PD150-S, an InGaAs photodiode with a 150µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... |
Anadigics Inc |
18 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
19 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
20 |
28C64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28C64A is a 64K bit CMOS Parallel EEPROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external com |
Microchip |
21 |
2N5071 |
24W(CW), 76-MHz Emiter-Balasted Overlay RF Power Transistor |
RCA Solid State |
22 |
2N5918 |
10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor |
RCA Solid State |
23 |
2N5919A |
16W, 400-MHz, Silicon NPN Emitter-Ballasted Overlay Transistor |
RCA Solid State |
24 |
2N6093 |
75W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode |
RCA Solid State |
25 |
2SC5337-T1 |
New power mini(a product with gain improved of 2SC4536) |
NEC |
26 |
3271/25 |
High Voltage - Chopper-stabilized Operational Amplifiers |
Burr Brown |
27 |
3291 |
Chopper-Stabilized Operational Amplifiers |
Burr Brown |
28 |
3291/14 |
Chopper-Stabilized Operational Amplifiers, low cost inverting only |
Burr Brown |
29 |
3292 |
Chopper-Stabilized Operational Amplifiers |
Burr Brown |
30 |
3292/14 |
Chopper-Stabilized Operational Amplifiers, low cost inverting only |
Burr Brown |
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