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Datasheets for ED O

Datasheets found :: 13442
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No. Part Name Description Manufacturer
1 1011-050 High Power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications SGS Thomson Microelectronics
2 1011-060 High power Class C transistor designed for L-Band Avionics transponder/interrogator pulsed output SGS Thomson Microelectronics
3 10133 Quad D-Type Latch (with gated outputs) Signetics
4 10133F Quad D-Type Latch (with gated outputs) Signetics
5 10161 1 of 8 multiplexer/decoder (selected output is low) Signetics
6 10161F 1 of 8 multiplexer/decoder (selected output is low) Signetics
7 10162 1 of 8 demultiplexer/decoder (selected output is high) Signetics
8 10162F 1 of 8 demultiplexer/decoder (selected output is high) Signetics
9 10171 Dual 1 of 4 demultiplexer/decoder (selected output is low) Signetics
10 10171F Dual 1 of 4 demultiplexer/decoder (selected output is low) Signetics
11 10172 Dual 1 OF 4 demultiplexer/decoder (selected output is high) Signetics
12 10172F Dual 1 OF 4 demultiplexer/decoder (selected output is high) Signetics
13 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec Samsung Electronic
14 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet Samsung Electronic
15 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet Samsung Electronic
16 13PD100-S The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... Anadigics Inc
17 13PD150-S The 13PD150-S, an InGaAs photodiode with a 150µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... Anadigics Inc
18 1416-100 High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications SGS Thomson Microelectronics
19 1416-200 High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications SGS Thomson Microelectronics
20 28C64A Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28C64A is a 64K bit CMOS Parallel EEPROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external com Microchip
21 2N5071 24W(CW), 76-MHz Emiter-Balasted Overlay RF Power Transistor RCA Solid State
22 2N5918 10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor RCA Solid State
23 2N5919A 16W, 400-MHz, Silicon NPN Emitter-Ballasted Overlay Transistor RCA Solid State
24 2N6093 75W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode RCA Solid State
25 2SC5337-T1 New power mini(a product with gain improved of 2SC4536) NEC
26 3271/25 High Voltage - Chopper-stabilized Operational Amplifiers Burr Brown
27 3291 Chopper-Stabilized Operational Amplifiers Burr Brown
28 3291/14 Chopper-Stabilized Operational Amplifiers, low cost inverting only Burr Brown
29 3292 Chopper-Stabilized Operational Amplifiers Burr Brown
30 3292/14 Chopper-Stabilized Operational Amplifiers, low cost inverting only Burr Brown


Datasheets found :: 13442
Page: | 1 | 2 | 3 | 4 | 5 |



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