| No. |
Part Name |
Description |
Manufacturer |
| 1 |
31DF2 |
3 Amp. Glass Passivated Ultrafast Recovery Rectifier |
Fagor |
| 2 |
31DF4 |
3 Amp. Glass Passivated Ultrafast Recovery Rectifier |
Fagor |
| 3 |
5962F9764101VEA |
Radiation Hardened Ultra High Frequency NPN Transistor Array |
Intersil |
| 4 |
5962F9764101VEC |
Radiation Hardened Ultra High Frequency NPN Transistor Array |
Intersil |
| 5 |
5962F9764101VXC |
Radiation Hardened Ultra High Frequency NPN Transistor Array |
Intersil |
| 6 |
80486GX |
Embedded Ultra-Low Power Processor |
Intel |
| 7 |
BUZ342 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Ultra low on-resistance) |
Siemens |
| 8 |
BYM12-100 |
Surface Mount Glass Passivated Ultrafast Rectifier, Forward Current 1.0A |
Vishay |
| 9 |
BYM12-150 |
Surface Mount Glass Passivated Ultrafast Rectifier, Forward Current 1.0A |
Vishay |
| 10 |
BYM12-200 |
Surface Mount Glass Passivated Ultrafast Rectifier, Forward Current 1.0A |
Vishay |
| 11 |
BYM12-300 |
Surface Mount Glass Passivated Ultrafast Rectifier, Forward Current 1.0A |
Vishay |
| 12 |
BYM12-400 |
Surface Mount Glass Passivated Ultrafast Rectifier, Forward Current 1.0A |
Vishay |
| 13 |
BYM12-50 |
Surface Mount Glass Passivated Ultrafast Rectifier, Forward Current 1.0A |
Vishay |
| 14 |
BYV25F-600 |
Enhanced ultrafast power diode |
NXP Semiconductors |
| 15 |
BYV25FB-600 |
Enhanced ultrafast power diode |
NXP Semiconductors |
| 16 |
BYV25FD-600 |
Enhanced ultrafast power diode |
NXP Semiconductors |
| 17 |
BYV25FX-600 |
Enhanced ultrafast power diode |
NXP Semiconductors |
| 18 |
BYV26DGP |
Glass Passivated Ultrafast Rectifier, Reverse Voltage 800 to 1000V, Forward Current 1.0A |
Vishay |
| 19 |
BYV26EGP |
Glass Passivated Ultrafast Rectifier, Reverse Voltage 800 to 1000V, Forward Current 1.0A |
Vishay |
| 20 |
BYV29F-600 |
Enhanced ultrafast power diode |
NXP Semiconductors |
| 21 |
BYV29FB-600 |
Enhanced ultrafast power diode |
NXP Semiconductors |
| 22 |
BYV29FD-600 |
Enhanced ultrafast power diode |
NXP Semiconductors |
| 23 |
BYV29FX-600 |
Enhanced ultrafast power diode |
NXP Semiconductors |
| 24 |
BYV410-600 |
Dual enhanced ultrafast power diode |
NXP Semiconductors |
| 25 |
BYV410X-600 |
Dual enhanced ultrafast power diode |
NXP Semiconductors |
| 26 |
C67078-S3135-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Ultra low on-resistance) |
Siemens |
| 27 |
CA3039L |
Beam-Lead Diode Array, 6 matched ultra-fast low-capacitance diodes |
RCA Solid State |
| 28 |
CM5-2315 |
Molded Ultra-Mini DYAD |
Clare Inc |
| 29 |
CM5-2319 |
Molded Ultra-Mini DYAD |
Clare Inc |
| 30 |
CM5-2325 |
Molded Ultra-Mini DYAD |
Clare Inc |
| | | |
