| No. |
Part Name |
Description |
Manufacturer |
| 1 |
285D |
Foil Tantalum Replacement, Gelled-Electrolyte Sintered Anode Tantalex, for Operation to + 125°C, Hermetically-Sealed |
Vishay |
| 2 |
AN-555 |
Application Note - Mounting stripline-opposed-emiter (SOE) transistors |
Motorola |
| 3 |
APPLICATION NOTE 555 |
Mounting stripline-opposed-emitter (SOE) transistors |
Motorola |
| 4 |
L4949ED-E |
Multifunction very low drop voltage regulator |
ST Microelectronics |
| 5 |
MLED60 |
Infrared-Emitting Diode 200nM PN Gallium Arsenide 120mW |
Motorola |
| 6 |
MLED90 |
Infrared-Emitting Diode 200nM PN Gallium Arsenide 120mW |
Motorola |
| 7 |
MLED92 |
Low Cost Infrared-Emitting Diode PN Gallium Arsenide |
Motorola |
| 8 |
NTE3029 |
Infrared-Emitting Diode |
NTE Electronics |
| 9 |
NTE3029A |
Infrared-Emitting Diode |
NTE Electronics |
| 10 |
NTE3029B |
Infrared-Emitting Diode |
NTE Electronics |
| 11 |
OED-EL-1L2 |
t-5mm, 940nm INFRARED EMITTING DIODE, WATER CLEAR LENS |
etc |
| 12 |
SI9161 |
Optimized-Efficiency Controller for RF Power Amplifier Boost Converter |
Vishay |
| 13 |
TIL318 |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 14 |
TIL31B |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 15 |
TIL33B |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 16 |
TIL34B |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 17 |
TOX9004 |
3 V, gallium aluminum arsenide infrared-emitting diode |
Texas Instruments |
| 18 |
TOX9005 |
2 V, P-N gallium arsenide infrared-emitting diode |
Texas Instruments |
| 19 |
TOX9006 |
3 V, gallium aluminum arsenide infrared-emitting diode |
Texas Instruments |
| 20 |
TOX9007 |
2 V, P-N gallium arsenide infrared-emitting diode |
Texas Instruments |
| | | |
