| No. |
Part Name |
Description |
Manufacturer |
| 1 |
DSEI8 |
Fast Recovery Epitaxial Diode (FRED) |
IXYS Corporation |
| 2 |
DSEI8-06A |
Fast Recovery Diodes |
IXYS |
| 3 |
DSEI8-06AS |
Fast Recovery Diodes |
IXYS |
| 4 |
EI82C684 |
QUAD UART |
IMP Inc |
| 5 |
EI88C681 |
DUAL UART |
IMP Inc |
| 6 |
EI88C681 |
DUAL UART |
IMP Inc |
| 7 |
EI8LC05 |
Low Capacitance, Bidirectional, Monolithic TVS Diode Network |
IMP Inc |
| 8 |
EI8LC05CX |
Low Capacitance/ Bidirectional/ Monolithic TVS Diode Network |
IMP Inc |
| 9 |
EI8LC05CX |
Low Capacitance, Bidirectional, Monolithic TVS Diode Network |
IMP Inc |
| 10 |
EI8LC08CX |
Low Capacitance/ Bidirectional/ Monolithic TVS Diode Network |
IMP Inc |
| 11 |
EI8LC08CX |
Low Capacitance, Bidirectional, Monolithic TVS Diode Network |
IMP Inc |
| 12 |
EI8LC12CX |
Low Capacitance, Bidirectional, Monolithic TVS Diode Network |
IMP Inc |
| 13 |
EI8LC12CX |
Low Capacitance/ Bidirectional/ Monolithic TVS Diode Network |
IMP Inc |
| 14 |
EI8LC15CX |
Low Capacitance, Bidirectional, Monolithic TVS Diode Network |
IMP Inc |
| 15 |
EI8LC15CX |
Low Capacitance/ Bidirectional/ Monolithic TVS Diode Network |
IMP Inc |
| 16 |
IDT71V416L10BEI8 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout |
IDT |
| 17 |
IDT71V416L10BEI8 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout |
IDT |
| 18 |
IDT71V416L12BEI8 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout |
IDT |
| 19 |
IDT71V416L12BEI8 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout |
IDT |
| 20 |
K6R4016C1D-EI8 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
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