No. |
Part Name |
Description |
Manufacturer |
1 |
03N70P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Advanced Power Technology |
2 |
28C16 |
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION |
ST Microelectronics |
3 |
28C256 |
32K-Bit Parallel E2PROM |
Catalyst Semiconductor |
4 |
28C64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28C64A is a 64K bit CMOS Parallel EEPROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external com |
Microchip |
5 |
28LV64 |
64K-Bit CMOS PARALLEL EEPROM |
Catalyst Semiconductor |
6 |
28LV64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28LV64A is a 64K bit CMOS Parallel EEPROM organized as 8K words by 8 bits. The 28LV64A is accessed like a static RAM for the read or write cycle |
Microchip |
7 |
2N2530N3 |
300V N-channel enhancement - Mode vertical DMOS FET |
Supertex Inc |
8 |
2N2530N8 |
300V N-channel enhancement - Mode vertical DMOS FET |
Supertex Inc |
9 |
2N4351 |
N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch |
Calogic |
10 |
2N4351 |
N-channel enhancement mode MOSFET general purpose amplifier/switch. |
Intersil |
11 |
2N4351 |
N-Channel Enhancement Mode MOSFET |
Linear Systems |
12 |
2N4352 |
P-Channel Enhancement Mode MOSFET Amplifier/Switch |
Calogic |
13 |
2N6659 |
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
SemeLAB |
14 |
2N6660 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
15 |
2N6661 |
N-Channel Enhancement Mode MOSFETs |
Microchip |
16 |
2N6661 |
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
SemeLAB |
17 |
2N6661 |
MOSPOWER N-Channel Enhancement Mode Transistor 80V 0.28A |
Siliconix |
18 |
2N6661 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
19 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
20 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
21 |
2N6756 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 14A |
Siliconix |
22 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
23 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
24 |
2N6758 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A |
Siliconix |
25 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
26 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
27 |
2N6760 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A |
Siliconix |
28 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
29 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
30 |
2N6762 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.5A |
Siliconix |
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