| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BFW17 |
Silicon NPN epitaxial planar RF transistor of the multi-emitter design |
ICCE |
| 2 |
BUD44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS |
ON Semiconductor |
| 3 |
BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 4 |
BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 5 |
FMA9 |
Digital transistor (Common Emitter Dual Transistors) |
ROHM |
| 6 |
H23B1 |
MATCHED EMITTER DETECTOR PAIR |
General Electric Solid State |
| 7 |
IS654A |
5V; 60mA 3mm DIA matched infrared emitter detector pair phototransistor output |
ISOCOM |
| 8 |
IS655A |
5V; 60mA 3mm DIA matched infrared emitter detector pair phototransistor output |
ISOCOM |
| 9 |
IS658A |
5V, 50mA side look matched infrared emitter detector pair phototransistor output |
ISOCOM |
| 10 |
IS659B |
5V, 50mA side look matched infrared emitter detector pair phototransistor output |
ISOCOM |
| 11 |
MJB18004D2T4-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network D2PAK For Surface Mount POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS |
ON Semiconductor |
| 12 |
MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
| 13 |
MJE18002D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
| 14 |
MJE18002D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS |
ON Semiconductor |
| 15 |
MJE18004D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ... |
ON Semiconductor |
| 16 |
MJE18004D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ... |
ON Semiconductor |
| 17 |
MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS |
ON Semiconductor |
| 18 |
SE302A |
Light emitting diode. GaAs infrared emitter diode industrial use. |
NEC |
| 19 |
SFH435 |
GaAs INFRARED EMITTER DOUBLE EMITTING DIODE |
Siemens |
| 20 |
VQ120A |
Infrared emitter diode, possibly equivalent CQX57I |
RFT |
| 21 |
VQ120B |
Infrared emitter diode |
RFT |
| 22 |
VQ120C |
Infrared emitter diode |
RFT |
| 23 |
VQ121 |
Infrared emitter diode |
RFT |
| 24 |
VQ121A |
Infrared emitter diode, possibly equivalent LD261 |
RFT |
| 25 |
VQ121B |
Infrared emitter diode, possibly equivalent SFH409 |
RFT |
| 26 |
VQ123A |
Infrared emitter diode |
RFT |
| 27 |
VQ123B |
Infrared emitter diode |
RFT |
| 28 |
VQ123C |
Infrared emitter diode, possibly equivalent LD271 |
RFT |
| 29 |
VQ125A |
Infrared emitter diode |
RFT |
| 30 |
VQ125B |
Infrared emitter diode |
RFT |
| | | |
