| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SA1182 |
Transistor Silicon PNP Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 2 |
2SA1312 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 3 |
2SA1313 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 4 |
2SA1588 |
Transistor Silicon PNP Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 5 |
2SA562TM |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 6 |
2SA9015 |
LOW FREQUENCY LOW NOISE AMPLIFIER |
USHA India LTD |
| 7 |
2SA992 |
Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. |
USHA India LTD |
| 8 |
2SB257 |
Low Frequency Low-Noise Transistor |
TOSHIBA |
| 9 |
2SB290 |
Low Frequency Low-Noise Transistor |
TOSHIBA |
| 10 |
2SB439 |
Low Frequency Low-Noise Transistor |
TOSHIBA |
| 11 |
2SB440 |
Low Frequency Low-Noise Transistor |
TOSHIBA |
| 12 |
2SB47 |
Low Frequency Low-Noise Transistor |
TOSHIBA |
| 13 |
2SB73 |
Germanium Transistor PNP Alloyed Junction Audio Frequency Low Noise Amplifier |
Hitachi Semiconductor |
| 14 |
2SC105 |
Low Frequency Low-Level Transistor |
TOSHIBA |
| 15 |
2SC1199 |
Silicon NPN epitaxial planar high frequency low noise transistor |
TOSHIBA |
| 16 |
2SC1222 |
Transistors LOW FREQUENCY LOW NOISE AMPLIFIER |
USHA India LTD |
| 17 |
2SC1335 |
LOW FREQUENCY LOW NOISE AMPLIFIER |
Unknow |
| 18 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
| 19 |
2SC1959 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 20 |
2SC2351 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 21 |
2SC2570A |
High-Frequency Low Noise transistors for VHF-and UHF band application of 2SC2570A - Application Note |
NEC |
| 22 |
2SC2570A |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 23 |
2SC2570A-T |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 24 |
2SC2859 |
Transistor Silicon NPN Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 25 |
2SC3324 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 26 |
2SC3325 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 27 |
2SC3355 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 28 |
2SC3663 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 29 |
2SC368 |
Low Frequency Low-Noise, Low Level Transistor |
TOSHIBA |
| 30 |
2SC369 |
Low Frequency Low-Noise Transistor |
TOSHIBA |
| | | |
