| No. |
Part Name |
Description |
Manufacturer |
| 1 |
03N70P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Advanced Power Technology |
| 2 |
16F84A |
18-pin Enhanced Flash/EEPROM 8-Bit Microcontroller |
Microchip |
| 3 |
16F876A |
28/40-pin Enhanced FLASH Microcontrollers |
Microchip |
| 4 |
16F876A |
28/40-pin Enhanced FLASH Microcontrollers |
Microchip |
| 5 |
1P1G08MDBVREPG4 |
Enhanced Product Single 2-Input Positive-And Gate 5-SOT-23 -55 to 125 |
Texas Instruments |
| 6 |
1P1G14MDBVREPG4 |
Enhanced Product Single Schmitt-Trigger Inverter 5-SOT-23 -55 to 125 |
Texas Instruments |
| 7 |
2N2530N3 |
300V N-channel enhancement - Mode vertical DMOS FET |
Supertex Inc |
| 8 |
2N2530N8 |
300V N-channel enhancement - Mode vertical DMOS FET |
Supertex Inc |
| 9 |
2N4351 |
N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch |
Calogic |
| 10 |
2N4351 |
N-channel enhancement mode MOSFET general purpose amplifier/switch. |
Intersil |
| 11 |
2N4351 |
N-Channel Enhancement Mode MOSFET |
Linear Systems |
| 12 |
2N4352 |
P-Channel Enhancement Mode MOSFET Amplifier/Switch |
Calogic |
| 13 |
2N6659 |
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
SemeLAB |
| 14 |
2N6660 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 15 |
2N6661 |
N-Channel Enhancement Mode MOSFETs |
Microchip |
| 16 |
2N6661 |
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
SemeLAB |
| 17 |
2N6661 |
MOSPOWER N-Channel Enhancement Mode Transistor 80V 0.28A |
Siliconix |
| 18 |
2N6661 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 19 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 20 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
| 21 |
2N6756 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 14A |
Siliconix |
| 22 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 23 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 24 |
2N6758 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A |
Siliconix |
| 25 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 26 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 27 |
2N6760 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A |
Siliconix |
| 28 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 29 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 30 |
2N6762 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.5A |
Siliconix |
| | | |
