No. |
Part Name |
Description |
Manufacturer |
1 |
03N70P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Advanced Power Technology |
2 |
16F84A |
18-pin Enhanced Flash/EEPROM 8-Bit Microcontroller |
Microchip |
3 |
16F876A |
28/40-pin Enhanced FLASH Microcontrollers |
Microchip |
4 |
16F876A |
28/40-pin Enhanced FLASH Microcontrollers |
Microchip |
5 |
1P1G08MDBVREPG4 |
Enhanced Product Single 2-Input Positive-And Gate 5-SOT-23 -55 to 125 |
Texas Instruments |
6 |
1P1G14MDBVREPG4 |
Enhanced Product Single Schmitt-Trigger Inverter 5-SOT-23 -55 to 125 |
Texas Instruments |
7 |
2N2530N3 |
300V N-channel enhancement - Mode vertical DMOS FET |
Supertex Inc |
8 |
2N2530N8 |
300V N-channel enhancement - Mode vertical DMOS FET |
Supertex Inc |
9 |
2N4351 |
N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch |
Calogic |
10 |
2N4351 |
N-channel enhancement mode MOSFET general purpose amplifier/switch. |
Intersil |
11 |
2N4351 |
N-Channel Enhancement Mode MOSFET |
Linear Systems |
12 |
2N4352 |
P-Channel Enhancement Mode MOSFET Amplifier/Switch |
Calogic |
13 |
2N6659 |
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
SemeLAB |
14 |
2N6660 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
15 |
2N6661 |
N-Channel Enhancement Mode MOSFETs |
Microchip |
16 |
2N6661 |
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
SemeLAB |
17 |
2N6661 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
18 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
19 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
20 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
21 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
22 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
23 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
24 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
25 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
26 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
27 |
2N6764 |
N-channel enhancement mode MOSFET power transistor |
Omnirel |
28 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
29 |
2N6766 |
N-channel enhancement mode MOSFET power transistor |
Omnirel |
30 |
2N6768 |
N-channel enhancement mode MOSFET power transistor |
Omnirel |
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