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Datasheets for ENT 25

Datasheets found :: 138
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 1N5929 1.5 W, silicon zener diode. Zener voltage 15V. Test current 25 mA. +-20% tolerance. Jinan Gude Electronic Device
2 1N5929A 1.5 W, silicon zener diode. Zener voltage 15V. Test current 25 mA. +-10% tolerance. Jinan Gude Electronic Device
3 1N5929C 1.5 W, silicon zener diode. Zener voltage 15V. Test current 25 mA. +-2% tolerance. Jinan Gude Electronic Device
4 1N5929D 1.5 W, silicon zener diode. Zener voltage 15V. Test current 25 mA. +-1% tolerance. Jinan Gude Electronic Device
5 AQV257M PhotoMOS relay, HE (high-function economy) type [1-channel (form A) type] - soft ON/OFF operation. Output rating: load voltage 200 V, load current 250 mA. Through hole terminal, tube packing style. Matsushita Electric Works(Nais)
6 AQV257MA PhotoMOS relay, HE (high-function economy) type [1-channel (form A) type] - soft ON/OFF operation. Output rating: load voltage 200 V, load current 250 mA. Surface-mount terminal, tube packing style. Matsushita Electric Works(Nais)
7 AQV257MAX PhotoMOS relay, HE (high-function economy) type [1-channel (form A) type] - soft ON/OFF operation. Output rating: load voltage 200 V, load current 250 mA. Surface-mount terminal, tape and reel packing style, picked from the 1/2/3-pin side. Matsushita Electric Works(Nais)
8 AQV257MAZ PhotoMOS relay, HE (high-function economy) type [1-channel (form A) type] - soft ON/OFF operation. Output rating: load voltage 200 V, load current 250 mA. Surface-mount terminal, tape and reel packing style, picked from the 4/5/6-pin side. Matsushita Electric Works(Nais)
9 AQY221R2SX PhotoMOS relay, RF (radio frequency). 1 form A, R 10 type. Output rating: load voltage 40 V, load current 250 mA. Matsushita Electric Works(Nais)
10 AQY221R2SZ PhotoMOS relay, RF (radio frequency). 1 form A, R 10 type. Output rating: load voltage 40 V, load current 250 mA. Matsushita Electric Works(Nais)
11 BR252 Single-phase silicon bridge rectifier. VRRM = 200V, VRMS = 140V, VDC = 200V. Current 25A. Rectron Semiconductor
12 C1952 Channel photomultiplexer, 3/4 inche, window material quartz., dark current 2500 pA. PerkinElmer Optoelectronics
13 C1953 Channel photomultiplexer, 3/4 inche, window material UV glass., dark current 2500 pA. PerkinElmer Optoelectronics
14 C1982 Channel photomultiplexer, 3/4 inche, window material quartz., dark current 250 pA. PerkinElmer Optoelectronics
15 C1983 Channel photomultiplexer, 3/4 inche, window material UV glass., dark current 250 pA. PerkinElmer Optoelectronics
16 FDD03-0505D4A 2.5 W DC/DC converter,input voltage 9-36 V, output voltage 5/5 V, output current 250/250 mA CHINFA Electronics IND
17 FDD03-0505D5A 2.5 W DC/DC converter,input voltage 18-72 V, output voltage 5/5 V, output current 250/250 mA CHINFA Electronics IND
18 GSIB2520 Single-Phase Single In-Line Bridge Rectifiers, Forward Current 25A Vishay
19 GSIB2540 Single-Phase Single In-Line Bridge Rectifiers, Forward Current 25A Vishay
20 GSIB2560 Single-Phase Single In-Line Bridge Rectifiers, Forward Current 25A Vishay
21 GSIB2580 Single-Phase Single In-Line Bridge Rectifiers, Forward Current 25A Vishay
22 HUF75333G3 Power dissipation 111 W Transistor polarity N Channel Current Id cont. 56 A Pitch lead 5.45 mm Voltage Vds max 55 V Resistance Rds on 0.016 R Temperature current 25 ?C Temperature power 25 ?C Fairchild Semiconductor
23 KBPC25005W Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 25 A. Shanghai Sunrise Electronics
24 KBPC2501W Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 25 A. Shanghai Sunrise Electronics
25 KBPC2502W Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 25 A. Shanghai Sunrise Electronics
26 KBPC2504W Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 400 V. Max average forward rectified current 25 A. Shanghai Sunrise Electronics
27 KBPC2506W Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 25 A. Shanghai Sunrise Electronics
28 KBPC2508W Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 800 V. Max average forward rectified current 25 A. Shanghai Sunrise Electronics
29 KBPC2510W Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward rectified current 25 A. Shanghai Sunrise Electronics
30 LP107 Low profile DC/DC converter, 25/30 watt. Voltage range 9-18VDC. Output voltage 5/+-12VDC. Output current 2500/+-500mA. Input current 30mA(no load), 2550mA(full load). International Power Sources


Datasheets found :: 138
Page: | 1 | 2 | 3 | 4 | 5 |



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