| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4148 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N914 |
IPRS Baneasa |
| 2 |
1N4149 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N916 |
IPRS Baneasa |
| 3 |
1N4151 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N3604 |
IPRS Baneasa |
| 4 |
1N4154 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N4009 |
IPRS Baneasa |
| 5 |
1N4446 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N914A |
IPRS Baneasa |
| 6 |
1N4447 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N916A |
IPRS Baneasa |
| 7 |
1N4448 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N914B |
IPRS Baneasa |
| 8 |
1N4449 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N916B |
IPRS Baneasa |
| 9 |
1N4454 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N3064 |
IPRS Baneasa |
| 10 |
2N3713 |
NPN silicon power transistor, complement to PNP type 2N3789 |
Motorola |
| 11 |
2N3714 |
NPN silicon power transistor, complement to PNP type 2N3790 |
Motorola |
| 12 |
2N3715 |
NPN silicon power transistor, complement to PNP type 2N3791 |
Motorola |
| 13 |
2N3716 |
NPN silicon power transistor, complement to PNP type 2N3792 |
Motorola |
| 14 |
2N3724 |
High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor |
ITT Semiconductors |
| 15 |
2N3725 |
High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor |
ITT Semiconductors |
| 16 |
2N4013 |
High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor |
ITT Semiconductors |
| 17 |
2N4014 |
High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor |
ITT Semiconductors |
| 18 |
2SD1753 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
Panasonic |
| 19 |
2SD1776 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
Panasonic |
| 20 |
2SD2486 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
Panasonic |
| 21 |
2SD2527 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
Panasonic |
| 22 |
2SD553 |
Silicon NPN triple diffused high current transistor |
TOSHIBA |
| 23 |
2SJ324-Z |
P-channel enhancement type |
NEC |
| 24 |
2SJ324-Z-E1 |
P-channel enhancement type |
NEC |
| 25 |
2SJ324-Z-E2 |
P-channel enhancement type |
NEC |
| 26 |
2SJ324-Z-T1 |
P-channel enhancement type |
NEC |
| 27 |
2SJ324-Z-T2 |
P-channel enhancement type |
NEC |
| 28 |
2SJ325(JM) |
P-channel enhancement type |
NEC |
| 29 |
2SJ325-Z |
P-channel enhancement type |
NEC |
| 30 |
2SJ325-Z-E1 |
P-channel enhancement type |
NEC |
| | | |
