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Datasheets for ENT-

Datasheets found :: 10685
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 1203P60 PWM Current-Mode Controller for Universal Off-Line Supplies Featuring Standby and Short Circuit ON Semiconductor
2 2045A CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES Texas Instruments
3 2CL2F High Voltage Dioes Standard AND Ultra-FAST Recovery HV Component
4 2CL2FF High Voltage Dioes Standard AND Ultra-FAST Recovery HV Component
5 2CL2FG High Voltage Dioes Standard AND Ultra-FAST Recovery HV Component
6 2CL2FH High Voltage Dioes Standard AND Ultra-FAST Recovery HV Component
7 2CL2FJ High Voltage Dioes Standard AND Ultra-FAST Recovery HV Component
8 2CL2FK High Voltage Dioes Standard AND Ultra-FAST Recovery HV Component
9 2CL2FL High Voltage Dioes Standard AND Ultra-FAST Recovery HV Component
10 2CL2FM High Voltage Dioes Standard AND Ultra-FAST Recovery HV Component
11 2CL2G High Voltage Dioes Standard AND Ultra-FAST Recovery HV Component
12 2CL2H High Voltage Dioes Standard AND Ultra-FAST Recovery HV Component
13 2CL2J High Voltage Dioes Standard AND Ultra-FAST Recovery HV Component
14 2N3959 NPN silicon transistor particularly well suited for high-speed current-mode logic switching applications Motorola
15 2N3960 NPN silicon transistor particularly well suited for high-speed current-mode logic switching applications Motorola
16 2N6660 N-Channel Enhancement-Mode Vertical DMOS FETs Supertex Inc
17 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Supertex Inc
18 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
19 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
20 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
21 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
22 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
23 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
24 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
25 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
26 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
27 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
28 2N6781 60 V, 06 ohm, N-channel enhancement-mode D-MOS power FET Topaz Semiconductor
29 2N6782 N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. General Electric Solid State
30 2N6782 100 V, 06 ohm, N-channel enhancement-mode D-MOS power FET Topaz Semiconductor


Datasheets found :: 10685
Page: | 1 | 2 | 3 | 4 | 5 |



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