| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1203P60 |
PWM Current-Mode Controller for Universal Off-Line Supplies Featuring Standby and Short Circuit |
ON Semiconductor |
| 2 |
2N3959 |
NPN silicon transistor particularly well suited for high-speed current-mode logic switching applications |
Motorola |
| 3 |
2N3960 |
NPN silicon transistor particularly well suited for high-speed current-mode logic switching applications |
Motorola |
| 4 |
2N6660 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 5 |
2N6661 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 6 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 7 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
| 8 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 9 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 10 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 11 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 12 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 13 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 14 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
| 15 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
| 16 |
2N6781 |
60 V, 06 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 17 |
2N6782 |
N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. |
General Electric Solid State |
| 18 |
2N6782 |
100 V, 06 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 19 |
2N6788 |
N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. |
General Electric Solid State |
| 20 |
2N6796 |
N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. |
General Electric Solid State |
| 21 |
2N7000 |
N-Channel Enhancement-Mode MOS Transistor |
Calogic |
| 22 |
2N7000 |
N-Channel Enhancement-Mode Vertical DMOS FET |
Supertex Inc |
| 23 |
2N7000 |
60 V, 5 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 24 |
2N7000 |
Enhancement-Mode MOSFET Transistors |
Vishay |
| 25 |
2N7002 |
N-Channel Enhancement-Mode MOS Transistor |
Calogic |
| 26 |
2N7002 |
N-CHANNEL ENHANCEMENT-MODE MOSFET |
Central Semiconductor |
| 27 |
2N7002 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 28 |
2N7007 |
N-Channel Enhancement-Mode Vertical DMOS FET |
Supertex Inc |
| 29 |
2N7008 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 30 |
2N7104 |
30 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
| | | |
