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Datasheets for ER AND D

Datasheets found :: 455
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No. Part Name Description Manufacturer
1 2N2949 NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-107 case Motorola
2 2N2950 NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-102 case Motorola
3 2N3375 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
4 2N3553 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
5 2N3632 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
6 2N3664 NPN silicon transistor for power amplifier and driver applications to 500MHz Motorola
7 2N3924 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
8 2N3925 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
9 2N3926 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
10 2N3927 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
11 2N3961 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
12 2SA1837 TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS TOSHIBA
13 2SA1899 TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS TOSHIBA
14 2SA1930 TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS TOSHIBA
15 2SA1932 TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS TOSHIBA
16 2SC3665 TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER AND DRIVE STAGE AMPLIFIER APPLICATIONS TOSHIBA
17 2SC5171 TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS TOSHIBA
18 2SC5174 TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS TOSHIBA
19 2SD1187 TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS TOSHIBA
20 2SK246 Field Effect Transistor Silicon N Channel Junction Type For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications TOSHIBA
21 2SK30 N CHANNEL JUNCTION TYPE (LOW NOISE PRE-AMPLIFIER/ TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS) TOSHIBA
22 2SK30ATM Field Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications TOSHIBA
23 A220D FM IF amplifier and demodulator, possibly equivalent TBA120S RFT
24 A223D FM IF amplifier and demodulator, possibly equivalent TBA120U RFT
25 A224D Tone IF amplifier and demodulator, selection with piezo ceramic filter RFT
26 A225D FM IF amplifier and demodulator, AFC, muting, field strength advertisement, possibly equivalent TDA1047 RFT
27 ACD2202 The ACD2202 uses both GaAs and Si technology to provide the downconverter and dual synthesizer functions in a double conversion tuner ... Anadigics Inc
28 ACD2203 The ACD2203 uses both GaAs and Si technology to provide the downconverter and dual synthesizer functions in a double conversion tuner ... Anadigics Inc
29 ACD2204 The ACD2204 uses both GaAs and Si technology to provide the downconverter and dual synthesizer functions in a double conversion tuner ... Anadigics Inc
30 ACD2206 The ACD2206 uses both GaAs and Si technology to provide the downconverter and dual synthesizer functions in a double conversion tuner ... Anadigics Inc


Datasheets found :: 455
Page: | 1 | 2 | 3 | 4 | 5 |



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