No. |
Part Name |
Description |
Manufacturer |
1 |
1S77H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
2 |
1S78H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
3 |
1S79H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
4 |
2N5038 |
20A NPN silicon power metal transistor 90V 140W |
Motorola |
5 |
2N5039 |
20A NPN Silicon Power Metal Transistor 75V 140W |
Motorola |
6 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
7 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
8 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
9 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
10 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
11 |
2SC1707 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
12 |
2SC1707A |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
13 |
2SC1707AH |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
14 |
2SC1781 |
HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
15 |
2SC1781H |
HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
16 |
2SD1616A |
Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. |
USHA India LTD |
17 |
54F403 |
First-In First-Out (FIFO) Buffer Memory |
Fairchild Semiconductor |
18 |
54F413 |
64x4 First-In First-Out Buffer Memory With Serial and Parallel I/O |
Fairchild Semiconductor |
19 |
54F413 |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
20 |
54F413D-CQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
21 |
54F413D-CQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
22 |
54F413D-MQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
23 |
54F413DM |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
24 |
54F413DMQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
25 |
54F413DMQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
26 |
54F413MW8 |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
27 |
54F413P-CQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
28 |
54F413P-MQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
29 |
54F433 |
First-In First-Out (FIFO) Buffer Memory |
Fairchild Semiconductor |
30 |
74F403 |
First-In First-Out (FIFO) Buffer Memory |
Fairchild Semiconductor |
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