| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0510-10 |
20 W, 28 V, 500-1000 MHz, UHF emitter silicon power transistor |
Acrian |
| 2 |
0510-10-2 |
20 W, 28 V, 500-1000 MHz, UHF emitter silicon power transistor |
Acrian |
| 3 |
05NH45 |
FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE |
TOSHIBA |
| 4 |
05NH46 |
FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 5 |
05NU41 |
SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 6 |
05NU42 |
SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 7 |
0R8GU41 |
RECTIFIER SILICON DIFFUSED TYPE HIGH SPEED RECTIFIER APPLICATIONS |
TOSHIBA |
| 8 |
1000GXHH23 |
Fast Recovery Rectifier Silicon Diffused Type |
TOSHIBA |
| 9 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 10 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 11 |
1GU42 |
RECTIFIER SILICON DIFFUSED TYPE HIGH SPEED RECTIFIER APPLICATIONS (FAST RECOVERY) |
TOSHIBA |
| 12 |
1N4001 |
Low power silicon rectifier diode |
Mullard |
| 13 |
1N4002 |
Low power silicon rectifier diode |
Mullard |
| 14 |
1N4003 |
Low power silicon rectifier diode |
Mullard |
| 15 |
1N4004 |
Low power silicon rectifier diode |
Mullard |
| 16 |
1N4005 |
Low power silicon rectifier diode |
Mullard |
| 17 |
1N4006 |
Low power silicon rectifier diode |
Mullard |
| 18 |
1N4007 |
Low power silicon rectifier diode |
Mullard |
| 19 |
1N5401 |
V(rrm): 100V; 3A medium power silicon rectifier diode |
International Rectifier |
| 20 |
1N5402 |
V(rrm): 200V; 3A medium power silicon rectifier diode |
International Rectifier |
| 21 |
1N5404 |
V(rrm): 400V; 3A medium power silicon rectifier diode |
International Rectifier |
| 22 |
1N5406 |
V(rrm): 600V; 3A medium power silicon rectifier diode |
International Rectifier |
| 23 |
1N5407 |
V(rrm): 800V; 3A medium power silicon rectifier diode |
International Rectifier |
| 24 |
1N5408 |
V(rrm): 1000V; 3A medium power silicon rectifier diode |
International Rectifier |
| 25 |
1R5BZ41 |
Rectifier Silicon Diffused Type |
TOSHIBA |
| 26 |
1R5GZ41 |
Rectifier Silicon Diffused Type |
TOSHIBA |
| 27 |
1R5JZ41 |
Rectifier Silicon Diffused Type |
TOSHIBA |
| 28 |
1R5NZ41 |
Rectifier Silicon Diffused Type |
TOSHIBA |
| 29 |
1S1829 |
RECTIFIER SILICON DIFFUSED TYPE |
TOSHIBA |
| 30 |
1S1830 |
Rectifier Silicon Diffused Type |
TOSHIBA |
| | | |
