| No. |
Part Name |
Description |
Manufacturer |
| 1 |
100322DCQR |
Low power 9- bit buffer. Commercial grade device with burn-in. |
National Semiconductor |
| 2 |
100322FCQR |
Low power 9- bit buffer. Commercial grade device with burn-in. |
National Semiconductor |
| 3 |
100322QCQR |
Low power 9- bit buffer. Commercial grade device with burn-in. |
National Semiconductor |
| 4 |
100322QMQB |
Low power 9- bit buffer. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 5 |
100329DCQR |
Low power octal ECL/TTL bidirectional translator with register. Commercial grade device with burn-in. |
National Semiconductor |
| 6 |
100329DMQB |
Low power octal ECL/TTL bidirectional translator with register. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 7 |
100329FCQR |
Low power octal ECL/TTL bidirectional translator with register. Commercial grade device with burn-in. |
National Semiconductor |
| 8 |
100329FMQB |
Low power octal ECL/TTL bidirectional translator with register. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 9 |
100329QCQR |
Low power octal ECL/TTL bidirectional translator with register. Commercial grade device with burn-in. |
National Semiconductor |
| 10 |
100329QMQB |
Low power octal ECL/TTL bidirectional translator with register. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 11 |
100364DCQR |
Low power 16-input multiplexer. Commercial grade device with burn-in. |
National Semiconductor |
| 12 |
100364DMQB |
Low power 16-input multiplexer. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 13 |
100364FCQR |
Low power 16-input multiplexer. Commercial grade device with burn-in. |
National Semiconductor |
| 14 |
100364FMQB |
Low power 16-input multiplexer. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 15 |
100364QCQR |
Low power 16-input multiplexer. Commercial grade device with burn-in. |
National Semiconductor |
| 16 |
100364QMQB |
Low power 16-input multiplexer. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 17 |
1241CBU |
OC-12/STM-4 uncooled laser transmitter. Average output power (dBM): -15(min),-11(typ),-8(max). Center wavelengrh(nm): 1274(min),1356(max). Connector SC. |
Agere Systems |
| 18 |
1N4001 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 50V. |
Jinan Gude Electronic Device |
| 19 |
1N4002 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 100V. |
Jinan Gude Electronic Device |
| 20 |
1N4003 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 200V. |
Jinan Gude Electronic Device |
| 21 |
1N4004 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 400V. |
Jinan Gude Electronic Device |
| 22 |
1N4005 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 600V. |
Jinan Gude Electronic Device |
| 23 |
1N4006 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 800V. |
Jinan Gude Electronic Device |
| 24 |
1N4007 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 1000V. |
Jinan Gude Electronic Device |
| 25 |
1N5221AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.4 V. Tolerance +-10%. |
Microsemi |
| 26 |
1N5221BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.4 V. Tolerance +-5%. |
Microsemi |
| 27 |
1N5221UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.4 V. |
Microsemi |
| 28 |
1N5222AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.5 V. Tolerance +-10%. |
Microsemi |
| 29 |
1N5222BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.5 V. Tolerance +-5%. |
Microsemi |
| 30 |
1N5222UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.5 V. |
Microsemi |
| | | |
