No. |
Part Name |
Description |
Manufacturer |
1 |
28F256 |
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt / Bulk Erase Flash Memory with Embedded Algorithms |
Advanced Micro Devices |
2 |
28F256 |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
ST Microelectronics |
3 |
5962-87539013X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
4 |
5962-8753901LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
5 |
5962-87539053X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
6 |
5962-8753905LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
7 |
5962-88670013X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
8 |
5962-8867001LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
9 |
5962-88670053X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
10 |
5962-8867005LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
11 |
5962-88724013X |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
12 |
5962-8872401LA |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
13 |
5962-88724043X |
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
14 |
5962-8872404LA |
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
15 |
5962-89755013X |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
16 |
5962-8975501LA |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
17 |
5962-89755043X |
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
18 |
5962-8975504LA |
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
19 |
A29L008UV-90U |
90ns; active read:9mA; programm/erase:20mA 0.2uA 1M x 8bit CMOS 3.0V-only boot sector flash memory |
AMIC Technology |
20 |
ACT-D2M32A-090F18C |
ACT-F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module |
Aeroflex Circuit Technology |
21 |
ACT-D2M32A-090F18I |
ACT-F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module |
Aeroflex Circuit Technology |
22 |
ACT-D2M32A-090F18M |
ACT-F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module |
Aeroflex Circuit Technology |
23 |
ACT-D2M32A-090F18Q |
ACT-F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module |
Aeroflex Circuit Technology |
24 |
ACT-D2M32A-090F18T |
ACT-F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module |
Aeroflex Circuit Technology |
25 |
ACT-D2M32A-120F18C |
ACT-F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module |
Aeroflex Circuit Technology |
26 |
ACT-D2M32A-120F18I |
ACT-F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module |
Aeroflex Circuit Technology |
27 |
ACT-D2M32A-120F18M |
ACT-F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module |
Aeroflex Circuit Technology |
28 |
ACT-D2M32A-120F18Q |
ACT-F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module |
Aeroflex Circuit Technology |
29 |
ACT-D2M32A-120F18T |
ACT-F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module |
Aeroflex Circuit Technology |
30 |
ACT-D2M32A-150F18C |
ACT-F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module |
Aeroflex Circuit Technology |
| | | |