No. |
Part Name |
Description |
Manufacturer |
1 |
ADM691 |
�P Supervisor with Backup Battery Switchover, 50 ms Nominal Adjustable Reset Period, Adjustable Watchdog Period, Chip Enable Signals, 4.65V Threshold Voltage, Watchdog, Backup Battery and Low Vcc Status O/Ps and 100mA Output Current |
Analog Devices |
2 |
ADM691 |
�P Supervisor with Backup Battery Switchover, 50 ms Nominal Adjustable Reset Period, Adjustable Watchdog Period, Chip Enable Signals, 4.65V Threshold Voltage, Watchdog, Backup Battery and Low Vcc Status O/Ps and 100mA Output Current |
Analog Devices |
3 |
ADM691A |
�P Supervisor with Backup Battery Switchover, Adjustable Reset and Watchdog Periods, Chip Enable Signals, 4.65V Threshold Voltage, Watchdog, Battery Backup and Low Vcc Status O/Ps and 250mA Output Current |
Analog Devices |
4 |
ADM695 |
�P Supervisor with Backup Battery Switchover, Adjustable Reset Period |
Analog Devices |
5 |
ADM800 |
�P Supervisor , Adjustable Reset and Watchdog Periods |
Analog Devices |
6 |
ADM8695 |
�P Supervisor with Backup Battery Switchover, 200ms Nominal Adjustable Reset Period, Adjustable Watchdog Period, Chip Enable Signals, 4.65V Threshold Voltage, Watchdog, Backup Battery and Low Vcc Status O/Ps. Upgrade for ADM695 |
Analog Devices |
7 |
ADM8695 |
�P Supervisor with Backup Battery Switchover, 200ms Nominal Adjustable Reset Period, Adjustable Watchdog Period, Chip Enable Signals, 4.65V Threshold Voltage, Watchdog, Backup Battery and Low Vcc Status O/Ps. Upgrade for ADM695 |
Analog Devices |
8 |
ADM8695ARW-REEL |
µP Supervisor with Backup Battery Switchover, 200ms Nominal Adjustable Reset Period, Adjustable Watchdog Period, Chip Enable ... |
Analog Devices |
9 |
ADM8695ARW-REEL |
µP Supervisor with Backup Battery Switchover, 200ms Nominal Adjustable Reset Period, Adjustable Watchdog Period, Chip Enable ... |
Analog Devices |
10 |
AN1012 |
PREDICTING THE BATTERY LIFE AND DATA RETENTION PERIOD OF NVRAMS |
SGS Thomson Microelectronics |
11 |
AN1216 |
IMPLEMENTING A PERIODIC ALARM WITH TIMEKEEPER |
SGS Thomson Microelectronics |
12 |
AN1254 |
HOW TO MEASURE THE PERIOD OF AN EXTERNAL SIGNAL WITH ST52X420 |
SGS Thomson Microelectronics |
13 |
KM416C1004CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
14 |
KM416C1004CJ-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
15 |
KM416C1004CJ-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
16 |
KM416C1204CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
17 |
KM416C1204CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
18 |
KM416C1204CJ-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
19 |
KM416C1204CT-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
20 |
KM416C1204CT-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
21 |
KM416C254DJ-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period |
Samsung Electronic |
22 |
KM416C254DJ-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period |
Samsung Electronic |
23 |
KM416C254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period |
Samsung Electronic |
24 |
KM416C254DT-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period |
Samsung Electronic |
25 |
KM416C254DT-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period |
Samsung Electronic |
26 |
KM416C254DT-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period |
Samsung Electronic |
27 |
KM416V1004CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
28 |
KM416V1004CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
29 |
KM416V1004CJ-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
30 |
KM416V1004CT-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
| | | |