| No. |
Part Name |
Description |
Manufacturer |
| 1 |
DS90UB913QSQ/NOPB |
DS90UB913Q/4Q 10-100MHz 10/12-Bit FPD-Link III SER/DES 32-WQFN -40 to 105 |
Texas Instruments |
| 2 |
DS90UB913QSQE/NOPB |
DS90UB913Q/4Q 10-100MHz 10/12-Bit FPD-Link III SER/DES 32-WQFN -40 to 105 |
Texas Instruments |
| 3 |
DS90UB913QSQX/NOPB |
DS90UB913Q/4Q 10-100MHz 10/12-Bit FPD-Link III SER/DES 32-WQFN -40 to 105 |
Texas Instruments |
| 4 |
HY62WT08081E-DGC |
HY62WT08081E Series 32Kx8bit CMOS SRAM |
Hynix Semiconductor |
| 5 |
HY62WT08081E-DGE |
HY62WT08081E Series 32Kx8bit CMOS SRAM |
Hynix Semiconductor |
| 6 |
HY62WT08081E-DGI |
HY62WT08081E Series 32Kx8bit CMOS SRAM |
Hynix Semiconductor |
| 7 |
HY62WT08081E-DPC |
HY62WT08081E Series 32Kx8bit CMOS SRAM |
Hynix Semiconductor |
| 8 |
HY62WT08081E-DPE |
HY62WT08081E Series 32Kx8bit CMOS SRAM |
Hynix Semiconductor |
| 9 |
HY62WT08081E-DPI |
HY62WT08081E Series 32Kx8bit CMOS SRAM |
Hynix Semiconductor |
| 10 |
HY62WT08081E-DTC |
HY62WT08081E Series 32Kx8bit CMOS SRAM |
Hynix Semiconductor |
| 11 |
HY62WT08081E-DTE |
HY62WT08081E Series 32Kx8bit CMOS SRAM |
Hynix Semiconductor |
| 12 |
HY62WT08081E-DTI |
HY62WT08081E Series 32Kx8bit CMOS SRAM |
Hynix Semiconductor |
| 13 |
ISD2532 |
Single-Chip Voice Record/Playback Devices 32-, 40-, 48-, and 64-Second Durations Data Sheet Body |
Winbond Electronics |
| 14 |
ISD2532 PRODUCTS |
Single-Chip Voice Record/Playback Devices 32-, 40-, 48-, and 64-Second Durations |
Information Storage Devices |
| 15 |
ISD2540 |
Single-Chip Voice Record/Playback Devices 32-, 40-, 48-, and 64-Second Durations Data Sheet Body |
Winbond Electronics |
| 16 |
ISD2540 PRODUCTS |
Single-Chip Voice Record/Playback Devices 32-, 40-, 48-, and 64-Second Durations |
Information Storage Devices |
| 17 |
ISD2548 |
Single-Chip Voice Record/Playback Devices 32-, 40-, 48-, and 64-Second Durations Data Sheet Body |
Winbond Electronics |
| 18 |
ISD2548 PRODUCTS |
Single-Chip Voice Record/Playback Devices 32-, 40-, 48-, and 64-Second Durations |
Information Storage Devices |
| 19 |
ISD2564 |
Single-Chip Voice Record/Playback Devices 32-, 40-, 48-, and 64-Second Durations Data Sheet Body |
Winbond Electronics |
| 20 |
ISD2564 PRODUCTS |
Single-Chip Voice Record/Playback Devices 32-, 40-, 48-, and 64-Second Durations |
Information Storage Devices |
| 21 |
MDE-32D102K |
1000V; max peak current:25000A; metal oxide varistor. High energy series 32mm single disc |
MDE Semiconductor |
| 22 |
MDE-32D112K |
1100V; max peak current:25000A; metal oxide varistor. High energy series 32mm single disc |
MDE Semiconductor |
| 23 |
MDE-32D122K |
1200V; max peak current:25000A; metal oxide varistor. High energy series 32mm single disc |
MDE Semiconductor |
| 24 |
MDE-32D182K |
1800V; max peak current:25000A; metal oxide varistor. High energy series 32mm single disc |
MDE Semiconductor |
| 25 |
MDE-32D201K |
200V; max peak current:25000A; metal oxide varistor. High energy series 32mm single disc |
MDE Semiconductor |
| 26 |
MDE-32D221K |
220V; max peak current:25000A; metal oxide varistor. High energy series 32mm single disc |
MDE Semiconductor |
| 27 |
MDE-32D241K |
240V; max peak current:25000A; metal oxide varistor. High energy series 32mm single disc |
MDE Semiconductor |
| 28 |
MDE-32D271K |
270V; max peak current:25000A; metal oxide varistor. High energy series 32mm single disc |
MDE Semiconductor |
| 29 |
MDE-32D301K |
300V; max peak current:25000A; metal oxide varistor. High energy series 32mm single disc |
MDE Semiconductor |
| 30 |
MDE-32D331K |
330V; max peak current:25000A; metal oxide varistor. High energy series 32mm single disc |
MDE Semiconductor |
| | | |
