| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4151 |
Silicon epitaxial planar switching diode. Electrically it resembles the 1N3604 |
AEG-TELEFUNKEN |
| 2 |
2SC680 |
Silicon NPN Triple Diffused Transistor, intended for use in 12 Inches TV, Vertical Deflection, Power Output |
Hitachi Semiconductor |
| 3 |
2SC680A |
Silicon NPN Triple Diffused Transistor, intended for use in 17 Inches TV, Vertical Deflection, Power Output |
Hitachi Semiconductor |
| 4 |
2SC681 |
Silicon NPN Triple Diffused Transistor, intended for use in 12 Inches TV Horizontal Deflection Power Output |
Hitachi Semiconductor |
| 5 |
2SC681A |
Silicon NPN Triple Diffused Transistor, intended for use in 12 Inches TV Horizontal Deflection Power Output |
Hitachi Semiconductor |
| 6 |
2SK3530 |
Fuji Power MOSFET SuperFAP-G series Target Specification |
Fuji Electric |
| 7 |
2SK3530-01MR |
Fuji Power MOSFET SuperFAP-G series Target Specification |
Fuji Electric |
| 8 |
2SK3679 |
Fuji Power MOSFET SuperFAP-G series Target Specification |
Fuji Electric |
| 9 |
2SK3683 |
Fuji Power MOSFET SuperFAP-G series Target Specification |
Fuji Electric |
| 10 |
2SK3683-01MR |
Fuji Power MOSFET SuperFAP-G series Target Specification |
Fuji Electric |
| 11 |
3SK240 |
Field Effect Transistor GaAs N-Channel Dual Gate MES Type TV Tuner, UHF RF Amplifier Applications |
TOSHIBA |
| 12 |
3SK283 |
N CHANNEL DUAL GATE MES TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 13 |
3SK284 |
N CHANNEL DUAL GATE MES TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 14 |
54ACTQ10 |
Quiet Series Triple 3-Input NAND Gate |
National Semiconductor |
| 15 |
54ACTQ10D |
Quiet Series Triple 3-Input NAND Gate |
National Semiconductor |
| 16 |
54ACTQ10F |
Quiet Series Triple 3-Input NAND Gate |
National Semiconductor |
| 17 |
54ACTQ10L |
Quiet Series Triple 3-Input NAND Gate |
National Semiconductor |
| 18 |
5962-9218201M2A |
Quiet Series Triple 3-Input NAND Gate |
National Semiconductor |
| 19 |
5962-9218201M2A(54ACTQ10LMQB) |
Quiet Series Triple 3-Input NAND Gate |
National Semiconductor |
| 20 |
5962-9218201M2A(54ACTQ10LMQB) |
Quiet Series Triple 3-Input NAND Gate |
National Semiconductor |
| 21 |
5962-9218201MCA |
Quiet Series Triple 3-Input NAND Gate |
National Semiconductor |
| 22 |
5962-9218201MCA(54ACTQ10DMQB) |
Quiet Series Triple 3-Input NAND Gate |
National Semiconductor |
| 23 |
5962-9218201MCA(54ACTQ10DMQB) |
Quiet Series Triple 3-Input NAND Gate |
National Semiconductor |
| 24 |
5962-9218201MDA |
Quiet Series Triple 3-Input NAND Gate |
National Semiconductor |
| 25 |
5962-9218201MDA(54ACTQ10FMQB) |
Quiet Series Triple 3-Input NAND Gate |
National Semiconductor |
| 26 |
5962-9218201MDA(54ACTQ10FMQB) |
Quiet Series Triple 3-Input NAND Gate |
National Semiconductor |
| 27 |
5962F0151701QXA |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish solder. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 28 |
5962F0151701QXC |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish gold. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 29 |
5962F0151701QXX |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish optional. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 30 |
5962F0151701QYA |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish solder. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| | | |
