| No. |
Part Name |
Description |
Manufacturer |
| 1 |
3N124 |
N-Channel silicon annular tetrode-connected field-effect transistor |
Motorola |
| 2 |
3N125 |
N-Channel silicon annular tetrode-connected field-effect transistor |
Motorola |
| 3 |
3N126 |
N-Channel silicon annular tetrode-connected field-effect transistor |
Motorola |
| 4 |
3N140 |
Silicon n channel field effect transistor dual insulated GATE FET (Tetrode MOST), |
Mullard |
| 5 |
3N141 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
| 6 |
4CX1500B |
RADIAL BEAM POWER TETRODE |
Eimac |
| 7 |
4CX5000A |
VHF POWER TETRODES |
Eimac |
| 8 |
4CX5000R |
VHF POWER TETRODES |
Eimac |
| 9 |
4X150A |
RADIAL BEAM POWER TETRODE |
Eimac |
| 10 |
4X150D |
RADIAL BEAM POWER TETRODE |
Eimac |
| 11 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 12 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 13 |
BF1005SW |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 14 |
BF1005W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 15 |
BF1009 |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
| 16 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 17 |
BF1009S |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
| 18 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 19 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 20 |
BF1012S |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 21 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 22 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 23 |
BF2000 |
Silicon N Channel MOSFET Tetrode |
Siemens |
| 24 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 25 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 26 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 27 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 28 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 29 |
BF960 |
N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODE |
Vishay |
| 30 |
BF961 |
Dual gate, discharge mode, MOS field controlled tetrode |
Mikroelektronikai Vallalat |
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